DF2378RVFQ34WV Renesas Electronics America, DF2378RVFQ34WV Datasheet - Page 232
DF2378RVFQ34WV
Manufacturer Part Number
DF2378RVFQ34WV
Description
MCU 3V 512K I-TEMP PB-FREE 144-L
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2378RVFQ34WV
Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Section 6 Bus Controller (BSC)
6.3.9
DRACCR is used to set the DRAM/synchronous DRAM interface bus specifications.
Note: The synchronous DRAM interface is not supported by the H8S/2378 Group.
Bit
15
14
13
12
11
Rev.7.00 Mar. 18, 2009 page 164 of 1136
REJ09B0109-0700
Bit Name
DRMI
—
TPC1
TPC0
SDWCD
DRAM Access Control Register (DRACCR)
Initial Value
0
0
0
0
0 *
R/W
R/W
R/W
R/W
R/W
R/W
Description
Idle Cycle Insertion
An idle cycle can be inserted after a
DRAM/synchronous DRAM access cycle when a
continuous normal space access cycle follows a
DRAM/synchronous DRAM access cycle. Idle cycle
insertion conditions, setting of number of states,
etc., comply with settings of bits ICIS2, ICIS1,
ICIS0, and IDLC in BCR register
0: Idle cycle not inserted
1: Idle cycle inserted
Reserved
This bit can be read from or written to. However,
the write value should always be 0.
Precharge State Control
These bits select the number of states in the RAS
precharge cycle in normal access and refreshing.
00: 1 state
01: 2 states
10: 3 states
11: 4 states
CAS Latency Control Cycle Disabled during
Continuous Synchronous DRAM Space Write
Access
Disables CAS latency control cycle (Tcl) inserted
by WTCRB (H) settings during synchronous DRAM
write access (see figure 6.5).
0: Enables CAS latency control cycle
1: Disables CAS latency control cycle
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