DF2378RVFQ34WV Renesas Electronics America, DF2378RVFQ34WV Datasheet - Page 324

• Manufacturer Part Number: DF2378RVFQ34WV
• Description: MCU 3V 512K I-TEMP PB-FREE 144-L
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378RVFQ34WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 34MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.73 and 6.74. In write access, DQMU and DQML are not in accordance with the settings of the
IDLC bit. The timing in this case is illustrated in figure 6.75.
Rev.7.00 Mar. 18, 2009 page 256 of 1136
REJ09B0109-0700
Precharge-sel
DQMU, DQML
Address bus
HWR, LWR
Data bus
CKE
CAS
RAS
WE
RD
φ
Figure 6.73 Example of Idle Cycle Operation in RAS Down Mode
PALL ACTV READ
address
(Read in Different Area) (IDLC = 0, CAS Latency 2)
Column
T
Continuous synchronous
DRAM space read
p
address
address
Row
Row
T
r
T
Column address 1
c1
T
cl
High
High
T
c2
External space read
T
External address
External address
1
NOP
T
2
T
3
Idle cycle
T
Continuous synchronous
DRAM space read
i
Column address 2
READ
T
c1
T
Cl
NOP
T
c2