DF2377RVFQ33 Renesas Electronics America, DF2377RVFQ33 Datasheet - Page 295
DF2377RVFQ33
Manufacturer Part Number
DF2377RVFQ33
Description
IC H8S MCU FLASH 3V 384K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2377RVFQ33
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 6 Bus Controller (BSC)
6.7.10
Bus Cycle Control in Write Cycle
By setting the SDWCD bit of the DRACCR to 1, the CAS latency control cycle (Tc1) that is
inserted by the WTCRB register in the write access of the synchronous DRAM can be disabled.
Disabling the CAS latency control cycle can reduce the write-access cycle count as compared to
synchronous DRAM read access. Figure 6.48 shows the write access timing when the CAS
latency control cycle is disabled.
T
T
T
T
p
r
c1
c2
φ
SDRAMφ
Address bus
Column address
Row address
Column address
Precharge-sel
Row address
RAS
CAS
WE
CKE
High
DQMU, DQML
Data bus
PALL
ACTV
NOP
WRIT
Figure 6.48 Example of Write Access Timing when CAS Latency Control Cycle Is Disabled
(SDWCD = 1)
Rev.7.00 Mar. 18, 2009 page 227 of 1136
REJ09B0109-0700
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