DF2377RVFQ33 Renesas Electronics America, DF2377RVFQ33 Datasheet - Page 979
DF2377RVFQ33
Manufacturer Part Number
DF2377RVFQ33
Description
IC H8S MCU FLASH 3V 384K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2377RVFQ33
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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8. When the data storable area indicated by programming parameter FMPDR is within the flash
In consideration of these conditions, there are three factors; operating mode, the bank structure of
the user MAT, and operations.
The areas in which the programming data can be stored for execution are shown in tables.
Table 21.7 Executable MAT
Operation
Programming
Erasing
Note : * Programming/Erasing is possible to user MATs.
Boot MAT. Please make sure you know which MAT is selected when switching between
them.
memory area, an error will occur even when the data stored is normal. Therefore, the data
should be transferred to the on-chip RAM to place the address that FMPDR indicates in an
area other than the flash memory.
Table 21.8 (2)
User Program Mode
Table 21.8 (1)
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 911 of 1136
Initiated Mode
User Boot Mode *
Table 21.8 (3)
Table 21.8 (4)
REJ09B0109-0700
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