HD64F2638F20J Renesas Electronics America, HD64F2638F20J Datasheet - Page 1061

IC H8S MCU FLASH 256K 128-QFP

HD64F2638F20J

Manufacturer Part Number
HD64F2638F20J
Description
IC H8S MCU FLASH 256K 128-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2600r
Datasheets

Specifications of HD64F2638F20J

Core Processor
H8S/2600
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SmartCard
Peripherals
Motor Control PWM, POR, PWM, WDT
Number Of I /o
72
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 12x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
128-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F2638F20J
Manufacturer:
PENESAS
Quantity:
252
H8S/2639, H8S/2638, H8S/2636,
H8S/2630, H8S/2635 Group
Item
Erase
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
REJ09B0103-0800 Rev. 8.00
May 28, 2010
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
4. To specify the maximum programming time value (t
5. For the maximum erase time (t
Examples: When t
erase/erase-verify flowchart.
memory control register (FLMCR1) is set. It does not include the programming
verification time)
not include the erase verification time)
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000: t
[In additional programming]
Programming counter (n)= 1 to 6:
wait time after E bit setting (t
To set the maximum erase time, the values of (t
the above formula.
Wait time after H'FF dummy
write *
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
1
t
When t
E
(max.) = Wait time after E bit setting (t
se
se
= 100 [ms], N = 12 times
= 10 [ms], N = 120 times
1
*
5
1
se
1
) and the maximum erase count (N):
E
(max.)), the following relationship applies between the
Symbol
t
t
t
N
sevr
cev
cswe
t
t
sp30
sp200
sp10
Min.
2
4
100
12
= 30 µs
= 10 µs
= 200 µs
se
) and (N) should be set so as to satisfy
Typ.
2
4
100
se
P
) x maximum erase count (N)
(max.)) in the 128-byte
Max.
120
Section 24 Electrical Characteristics
Unit
µs
µs
µs
Times
Page 1011 of 1458
Test Condition

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