HD64F2638F20J Renesas Electronics America, HD64F2638F20J Datasheet - Page 928

• Manufacturer Part Number: HD64F2638F20J
• Description: IC H8S MCU FLASH 256K 128-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2638F20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: Motor Control PWM, POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 128-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 21C ROM
(H8S/2635 Group)
21C.9 Programming/Erasing Flash Memory
A software method, using the CPU, is employed to program and erase flash memory in the on-
board programming modes. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes are made by
setting the PSU, ESU, P, E, PV, and EV bits in FLMCR1 for on-chip flash memory.
The flash memory cannot be read while it is being written or erased. The flash memory cannot be
read while being programmed or erased. Therefore, the program (user program) that controls flash
memory programming/erasing should be located and executed in on-chip RAM or external
memory. If the program is to be located in external memory, the instruction for writing to flash
memory, and the following instruction, should be placed in on-chip RAM. Also ensure that the
DTC is not activated before or after execution of the flash memory write instruction.
In the following operation descriptions, wait times after setting or clearing individual bits in
FLMCR1 are given as parameters; for details of the wait times, see section 24.2.7 and 24.3.7,
Flash Memory Characteristics.
Notes: 1. Operation is not guaranteed if bits SWE, ESU, PSU, EV, PV, E, and P of FLMCR1 are
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2. When programming or erasing, set FWE to 1 (programming/erasing will not be
3. Programming should be performed in the erased state. Do not perform additional
set/reset by a program in flash memory in the corresponding address areas.
executed if FWE = 0).
programming on previously programmed addresses.
H8S/2639, H8S/2638, H8S/2636,
REJ09B0103-0800 Rev. 8.00
H8S/2630, H8S/2635 Group
May 28, 2010