SAK-TC1797-512F180E AC Infineon Technologies, SAK-TC1797-512F180E AC Datasheet - Page 140
SAK-TC1797-512F180E AC
Manufacturer Part Number
SAK-TC1797-512F180E AC
Description
IC MCU 32BIT FLASH 416-BGA
Manufacturer
Infineon Technologies
Series
TC17xxr
Datasheet
1.SAK-TC1797-512F180E_AC.pdf
(190 pages)
Specifications of SAK-TC1797-512F180E AC
Core Processor
TriCore
Core Size
32-Bit
Speed
180MHz
Connectivity
ASC, CAN, EBI/EMI, MLI, MSC, SSC
Peripherals
DMA, POR, WDT
Number Of I /o
219
Program Memory Size
4MB (4M x 8)
Program Memory Type
FLASH
Ram Size
224K x 8
Voltage - Supply (vcc/vdd)
1.42 V ~ 1.58 V
Data Converters
A/D 48x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
416-BGA
Packages
PG-BGA-416
Max Clock Frequency
180.0 MHz
Sram (incl. Cache)
224.0 KByte
Can Nodes
4
A / D Input Lines (incl. Fadc)
48
Program Memory
4.0 MB
For Use With
B158-H8537-G2-X-7600IN - KIT STARTER TC179X FAMILY
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
SP000432392
- Current page: 140 of 190
- Download datasheet (6Mb)
Table 10
Parameter
Class F Pads, CMOS Mode (
Input low voltage
Class F pins
Input high voltage
Class F pins
Input hysteresis
Class F pins
Input leakage
current Class F
pins
Output low voltage
6)
Output high
voltage
Class D Pads
See ADC Characteristics
1) Not subject to production test, verified by design / characterization.
2) Only one of these parameters is tested, the other is verified by design characterization
3) Maximum resistance of the driver
4) Function verified by design, value verified by design characterization.
5)
6) The following constraint applies to an LVDS pair used in CMOS mode: only one pin of a pair should be used
Data Sheet
25 / 20 Ω for strong driver mode,
200 / 150 Ω for medium driver mode,
600 / 400 Ω for weak driver mode,
verified by design / characterization.
Hysteresis is implemented to avoid metastable states and switching due to internal ground bounce.
It cannot be guaranteed that it suppresses switching due to external system noise.
V
as output, the other should be used as input, or both pins should be used as inputs. Using both pins as outputs
is not recommended because of the higher crosstalk between them.
DDEBU
2) 6)
= 2.5 V ± 5%. For
Input/Output DC-Characteristics (cont’d)(Operating Conditions apply)
Symbol
V
V
HYSF
I
V
V
OZF
ILF
IHF
OLF
OHF
V
DDEBU
SR
SR
CC
CC
CC
= 3.3 ± 5% see class A2 pads.
I
R
OH / L
I
V
DSON
Min.
-0.3
0.60 ×
V
0.05 ×
V
–
–
2.4
V
0.4
–
OH / L
DDP
DDP
DDP
DDP
I
OH / L
< 2 mA,
, defined for P_MOS / N_MOS transistor separately:
< 100 uA,
= 3.13 to 3.47 V = 3.3V ± 5%)
-
< 400 uA,
Values
–
–
–
–
–
–
–
–
Typ. Max.
136
0.36 ×
V
V
0.3 or
max.
3.6
–
±3000
±6000
0.4
–
–
–
DDP
DDP
+
Unit Note / Test Condition
V
V
V
nA
V
V
V
–
–
Whatever is lower
((
((
Otherwise
I
I
I
–
OL
OH
OH
V
V
DDP
DDP
Electrical Parameters
= 2 mA
= -2 mA
= -1.4 mA
/2)-1) <
/2)+1)
2)
<
V1.1, 2009-04
V
IN
TC1797
Related parts for SAK-TC1797-512F180E AC
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Microcontrollers (MCU) 32 BIT FLASH
Manufacturer:
Infineon Technologies
Part Number:
Description:
Microcontrollers (MCU) 32-Bit Single-Chip MCU TriCore
Manufacturer:
Infineon Technologies
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
16-bit microcontroller with 2x2 KByte RAM
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Si-MMIC-amplifier in SIEGET 25-technologie
Manufacturer:
Infineon Technologies AG
Datasheet: