MMC2107CFCPV33 Freescale Semiconductor, MMC2107CFCPV33 Datasheet - Page 185

• Manufacturer Part Number: MMC2107CFCPV33
• Description: IC MCU 33MHZ 128K FLASH 144-LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCorer

Specifications of MMC2107CFCPV33

• Core Processor: M210
• Core Size: 32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, SCI, SPI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 72
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-LQFP
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 33 MHz
• Number Of Programmable I/os: 32
• Number Of Timers: 4 bit
• Operating Supply Voltage: 0 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: No RoHS Version Available

9.6 Glossary of Terms
MMC2107 – Rev. 2.0
MOTOROLA
Array block – CMFR array subdivision is a 16-Kbyte contiguous block
of information. Each array block can be erased independently.
BIU – Bus interface unit that controls access and operation of the CMFR
CMFR – CDR MoneT FLASH ARray
Erase interlock write – A write to any CMFR array address after
initializing the erase sequence
Erase margin read – Special off-page read of the CMFR array in which
the CMFR hardware adjusts the reference of the sense amplifier to
check for correct erase operation. All CMFR off-page reads between the
erase interlock write and clearing the SES bit are erase margin reads.
Initialize program/erase sequence – The write to the high-voltage
control register that changes the SES bit from a 0 to a 1
MoneT – The Motorola one-transistor bitcell
Off-page read – Array read operation that requires two clocks and
updates a page buffer
On-page read – Array read operation that accesses information in one
of the read page buffers and requires one clock.
Overprogrammed – By exceeding the specified programming time
and/or voltage, a CMFR bit can be overprogrammed. This causes
erased bits in the same column in the same array block to read as
programmed.
Programming write – A write to a CMFR array address to transfer
information into a program page buffer. The CMFR accepts
programming writes after initializing the program sequence until the EHV
bit is changed from a 0 to a 1.
Program margin read – Special off-page read of the CMFR array in
which the CMFR hardware adjusts the reference of the sense amplifier
to check for correct program operation. All CMFR array off-page reads
between the first programming write and clearing the SES bit are
program margin reads.
Freescale Semiconductor, Inc.
For More Information On This Product,
Non-Volatile Memory FLASH (CMFR)
Go to: www.freescale.com
Non-Volatile Memory FLASH (CMFR)
Glossary of Terms
Technical Data
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