MC68HC711E20CFN2 Freescale Semiconductor, MC68HC711E20CFN2 Datasheet - Page 101

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MC68HC711E20CFN2

Manufacturer Part Number
MC68HC711E20CFN2
Description
IC MCU 20K 2MHZ OTP 52-PLCC
Manufacturer
Freescale Semiconductor
Series
HC11r
Datasheets

Specifications of MC68HC711E20CFN2

Core Processor
HC11
Core Size
8-Bit
Speed
2MHz
Connectivity
SCI, SPI
Peripherals
POR, WDT
Number Of I /o
38
Program Memory Size
20KB (20K x 8)
Program Memory Type
OTP
Eeprom Size
512 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
52-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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4.6.1.2 EPROM and EEPROM Programming Control Register
M68HC11E Family — Rev. 3.2
MOTOROLA
1. MC68HC711E9 only
The EPROM and EEPROM programming control register (PPROG)
selects and controls the EEPROM programming function. Bits in
PPROG enable the programming voltage, control the latching of data to
be programmed, and select the method of erasure (for example, byte,
row, etc.).
ODD — Program Odd Rows in Half of EEPROM (Test) Bit
EVEN — Program Even Rows in Half of EEPROM (Test) Bit
ELAT — EPROM/OTPROM Latch Control Bit
BYTE — Byte/Other EEPROM Erase Mode Bit
ROW — Row/All EEPROM Erase Mode Bit
Address:
Reset:
Read:
Write:
For the MC68HC711E9, EPGM enables the high voltage necessary
for both EPROM/OTPROM and EEPROM programming.
For MC68HC711E9, ELAT and EELAT are mutually exclusive and
cannot both equal 1.
This bit overrides the ROW bit.
If BYTE is 1, ROW has no meaning.
0 = EPROM address and data bus configured for normal reads
1 = EPROM address and data bus configured for programming
0 = Row or bulk erase
1 = Erase only one byte
0 = Bulk erase
1 = Row erase
Operating Modes and On-Chip Memory
$103B
Figure 4-17. EPROM and EEPROM Programming
ODD
Bit 7
0
EVEN
6
0
Control Register (PPROG)
ELAT
5
0
(1)
BYTE
4
0
Operating Modes and On-Chip Memory
ROW
3
0
ERASE
2
0
EELAT
Technical Data
1
0
EEPROM
EPGM
Bit 0
0
101

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