HD64F2319EVTE25 Renesas Electronics America, HD64F2319EVTE25 Datasheet - Page 395
HD64F2319EVTE25
Manufacturer Part Number
HD64F2319EVTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2319EVTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Part Number:
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Figure 9.26 shows an example of PWM mode 2 operation.
In this example, synchronous operation is designated for channels 0 and 1, TGR1B compare
match is set as the TCNT clearing source, and 0 is set for the initial output value and 1 for the
output value of the other TGR registers (TGR0A to TGR0D, TGR1A), to output a 5-phase PWM
waveform.
In this case, the value set in TGR1B is used as the period, and the values set in the other TGR
registers as the duty.
TGR1B
TGR1A
TGR0D
TGR0C
TGR0B
TGR0A
H'0000
TIOCA0
TIOCB0
TIOCC0
TIOCD0
TIOCA1
TCNT value
Figure 9.26 Example of PWM Mode Operation (2)
Counter cleared by TGR1B
compare match
Rev.7.00 Feb. 14, 2007 page 361 of 1108
Section 9 16-Bit Timer Pulse Unit (TPU)
REJ09B0089-0700
Time
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