HD64F2319EVTE25 Renesas Electronics America, HD64F2319EVTE25 Datasheet - Page 635
HD64F2319EVTE25
Manufacturer Part Number
HD64F2319EVTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2319EVTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F2319EVTE25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
HD64F2319EVTE25V
Manufacturer:
RENESAS
Quantity:
210
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Notes: 1. Prewriting (setting erase block data to all 0) is not necessary.
2. The values of x, y, z, α, β, γ, ε, η, θ, and N are shown in section 20.3.6, Flash Memory Characteristics.
3. Verify data is read in 16-bit (W) units.
4. Set only one bit in EBR1or EBR2. More than one bit cannot be set.
5. Erasing is performed in block units. To erase a number of blocks, the individual blocks must be erased sequentially.
Increment
address
NG
Figure 17.16 Erase/Erase-Verify Flowchart
NG
Set block start address to verify address
H'FF dummy write to verify address
*5
Clear ESU bit in FLMCR1
Clear SWE bit in FLMCR1
Set SWE bit in FLMCR1
Set ESU bit in FLMCR1
Clear EV bit in FLMCR1
Clear E bit in FLMCR1
Set EV bit in FLMCR1
Last address of block?
Set E bit in FLMCR1
erasing of all erase
Verify data = all 1?
Set EBR1, EBR2
Read verify data
End of erasing
Disable WDT
Enable WDT
Wait (z) ms
Wait (x) μs
Wait (y) μs
Wait (α) μs
Wait (β) μs
Wait (η) μs
Wait (θ) μs
Wait (γ) μs
Wait (ε) μs
blocks?
End of
n = 1
Start
OK
OK
OK
*1
*2
NG
*2
*4
*2
Start of erase
*2
Halt erase
*2
*2
*2
*2
*3
Rev.7.00 Feb. 14, 2007 page 601 of 1108
Clear SWE bit in FLMCR1
Clear EV bit in FLMCR1
Erase failure
Wait (η) μs
Wait (θ) μs
n ≥ N?
OK
*2
REJ09B0089-0700
NG
*2
Section 17 ROM
n ← n + 1
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