HD64F2319EVTE25 Renesas Electronics America, HD64F2319EVTE25 Datasheet - Page 640
HD64F2319EVTE25
Manufacturer Part Number
HD64F2319EVTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2319EVTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
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Company:
Part Number:
HD64F2319EVTE25
Manufacturer:
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Quantity:
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Part Number:
HD64F2319EVTE25V
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Section 17 ROM
17.9.2
An example in which flash memory block area EB1 is overlapped is shown below.
Example in Which Flash Memory Block Area EB1 Is Overlapped
1. Set bits RAMS, RAM2, RAM1, and RAM0 in RAMER to 1, 0, 0, 1, to overlap part of RAM
2. Real-time programming is performed using the overlapping RAM.
3. After the program data has been confirmed, the RAMS bit is cleared, releasing RAM overlap.
4. The data written in the overlapping RAM is written into the flash memory space (EB1).
Rev.7.00 Feb. 14, 2007 page 606 of 1108
REJ09B0089-0700
onto the area (EB1) for which real-time programming is required.
(H'5FFFF)
(H'1FFFF)
Notes: 1. H'5FFFF, EB8 to EB13 in the H8S/2315 F-ZTAT.
RAM Overlap
H'3FFFF
H'00000
H'01000
H'02000
H'03000
H'04000
H'05000
H'06000
H'07000
H'08000
2. H'1FFFF, EB8 and EB9 in the H8S/2317 F-ZTAT.
*1
*2
Figure 17.19 Example of RAM Overlap Operation
(EB8 and EB9)
(EB8 to EB13)
Flash memory
EB8 to EB11
EB0
EB1
EB2
EB3
EB4
EB5
EB6
EB7
* 1
* 2
This area can be accessed
from both the RAM area
and flash memory area
On-chip RAM
H'FFDC00
H'FFEBFF
H'FFFBFF
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