HD64F2319EVTE25 Renesas Electronics America, HD64F2319EVTE25 Datasheet - Page 653
HD64F2319EVTE25
Manufacturer Part Number
HD64F2319EVTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2319EVTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F2319EVTE25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
HD64F2319EVTE25V
Manufacturer:
RENESAS
Quantity:
210
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AC Characteristics
Table 17.20 AC Characteristics in Auto-Erase Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
Status polling start time
Status polling access time
Memory erase time
Erase setup time
Erase end setup time
WE rise time
WE fall time
I/O
A
5
18
to I/O
FWE
to A
I/O
I/O
WE
OE
CE
0
7
6
0
CC
= 3.3 V ±0.3 V, V
t
ens
Figure 17.27 Auto-Erase Mode Timing Waveforms
t
ces
t
f
t
ds
t
wep
H'20
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
ests
spa
erase
ens
enh
r
f
t
t
ceh
SS
r
t
dh
= 0 V, T
t
nxtc
a
= 25°C ±5°C
Min
20
0
0
50
50
70
1
—
100
100
100
—
—
H'20
Erase end identifi-
cation signal
Erase normal end
confirmation signal
t
Rev.7.00 Feb. 14, 2007 page 619 of 1108
ests
t
erase
t
spa
Max
—
—
—
—
—
—
—
150
40000
—
—
30
30
H'00
t
enh
t
nxtc
REJ09B0089-0700
Section 17 ROM
Unit
μs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
ns
ns
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