HD64F2319EVTE25 Renesas Electronics America, HD64F2319EVTE25 Datasheet - Page 692
HD64F2319EVTE25
Manufacturer Part Number
HD64F2319EVTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2319EVTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Section 17 ROM
Rev.7.00 Feb. 14, 2007 page 658 of 1108
REJ09B0089-0700
Note: 7. Write Pulse Width
Note: Use a (z3) μs write pulse for additional
Notes: 1. Data transfer is performed by byte transfer. The lower 8 bits of
Number of Writes (n)
Additional program data
Clear PSU1 (2) bit in FLMCR1 (2)
Write pulse application subroutine
Set PSU1 (2) bit in FLMCR1 (2)
Reprogram data area
Wait (z1) μs or (z2) μs or (z3) μs
Clear P1 (2) bit in FLMCR1 (2)
Program data area
Set P1 (2) bit in FLMCR1 (2)
area (128 bytes)
programming.
Sub-routine write pulse
2. Verify data is read in 16-bit (W) units.
3. Even bits for which programming has been completed in the
4. A 128-byte area for storing program data, a 128-byte area for
5. A write pulse of (z1) or (z2) μs should
6. For the values of x, y, z1, z2, z3, α, β,
(128 bytes)
(128 bytes)
1000
998
999
10
11
12
13
1
2
3
4
5
6
7
8
9
.
.
.
RAM
the first address written to must be H'00 or H'80. A 128-byte
data transfer must be performed even if writing fewer than 128
bytes; in this case, H'FF data must be written to the extra
addresses.
128-byte programming loop will be subjected to additional
programming if they fail the subsequent verify operation.
storing reprogram data, and a 128-byte area for storing
additional program data should be provided in RAM. The
contents of the reprogram data and
additional program data areas are
modified as programming proceeds.
be applied according to the progress
of programming. See Note *7 for the
pulse widths. When the additional
program data is programmed, a write
pulse of (z3) μs should be applied.
Reprogram data X' stands for
reprogram data to which a write pulse
has been applied.
γ, ε, η, θ, and N, see section 20.3.6,
Flash Memory Characteristics.
Disable WDT
Enable WDT
Wait (α) μs
Wait (y) μs
Wait (β) μs
End sub
Write Time (z) μs
Figure 17.45 Program/Program-Verify Flowchart
*6
z1
z1
z1
z1
z1
z1
z2
z2
z2
z2
z2
z2
z2
z2
z2
z2
.
.
.
*6
*5 *6
*6
*6
Program Data Operation Chart
Additional Program Data Operation Chart
Increment address
Reprogram Data (X')
Original Data (D)
0
1
0
1
Verify Data (V)
Verify Data (V)
Store 128-byte program data in program
NG
data area consecutively to flash memory
additional program data area in RAM to
Write 128-byte data in RAM reprogram
Transfer reprogram data to reprogram
Additional program data computation
H'FF dummy write to verify address
Transfer additional program data to
Sequentially write 128-byte data in
data area and reprogram data area
Clear SWE1 (2) bit in FLMCR1 (2)
Clear PV1 (2) bit in FLMCR1 (2)
Set SWE1 (2) bit in FLMCR1 (2)
Set PV1 (2) bit in FLMCR1 (2)
0
1
0
1
0
1
0
1
Reprogram data computation
additional program data area
(z3) µs additional write pulse
Start of programming
End of programming
Read data = verify
Read verify data
(z1) μs or (z2) μs
data verification
flash memory
Wait (x) μs
completed?
Write Pulse
Write pulse
Wait (γ) μs
Wait (ε) μs
Wait (η) μs
Wait (θ) μs
Additional Program Data (Y)
data area
128-byte
6 ≥ n ?
6 ≥ n ?
m = 0?
m = 0
n = 1
data?
Start
Reprogram Data (X)
OK
OK
OK
OK
OK
Sub-routine-call
1
0
1
0
1
NG
NG
NG
NG
*6
*6
*4
*1
See Note *7 for pulse width
*6
*6
*2
*3
*4
*6
*1
*6
*4
Programming completed
Programming incomplete; reprogram
Still in erased state; no action
Additional programming executed
Additional programming not executed
Additional programming not executed
Additional programming not executed
Clear SWE1 (2) bit in FLMCR1 (2)
m = 1
Perform programming in the
erased state.
Do not perform additional
programming
on previously programmed
addresses.
Programming failure
Wait (θ) μs
Comments
Comments
n ≥ N?
OK
*6
NG
n ← n + 1
*6
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