HD64F2319EVTE25 Renesas Electronics America, HD64F2319EVTE25 Datasheet - Page 785
HD64F2319EVTE25
Manufacturer Part Number
HD64F2319EVTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2319EVTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Company:
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17.28.4 Auto-Program Mode
(1) In auto-program mode, programming is in 128-byte units. That is, 128 bytes of data are
(2) Even in the programming of less than 128 bytes, 128 bytes of data must be transferred. H'FF
(3) Set the low seven bits of the address to be transferred to low level. Inputting an invalid address
(4) The memory address is transferred in the 2nd cycle. Do not transfer addresses in the 3rd or
(5) Do not issue commands while programming is in progress.
(6) When programming, execute automatic programming once for each 128-byte block of
(7) To confirm the end of automatic programming, check the signal on the I/O
(8) Status-polling information on the I/O
For the AC characteristics in auto-program mode, see section 17.29.2, AC Characteristics and
Timing in PROM Mode.
17.28.5 Auto-Erase Mode
(1) Auto-erase mode only supports erasing of the entire memory.
(2) Do not perform command writing during auto erasing is in progress.
(3) To confirm the end of automatic erasing, check the signal on the I/O
(4) Status polling information on the I/O
For the AC characteristics in auto-erase mode, see section 17.29.2, AC Characteristics and Timing
in PROM Mode.
transferred in succession.
should be written to those addresses that are unnecessarily written to.
will result in a programming error, although processing will proceed to the memory-
programming operation.
later cycles.
addresses. Programming the block at an address where programming has already been
performed is not possible.
in the status-read mode is also possible (status polling of the I/O
status of automatic programming).
written. As long as no command is written, the information is made readable by setting CE and
OE for enabling.
status-read mode is also possible (status polling of the I/O
of automatic erasure).
As long as no command is written, the information is made readable by setting CE and OE for
enabling.
6
6
and I/O
and I/O
7
7
pins is retained until the next command writing.
pins is retained until the next command is
Rev.7.00 Feb. 14, 2007 page 751 of 1108
7
pin is used to check the end status
7
pin is used to check the end
6
pin. Confirmation in the
6
pin. Confirmation
REJ09B0089-0700
Section 17 ROM
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