HD64F2319EVTE25 Renesas Electronics America, HD64F2319EVTE25 Datasheet - Page 815
HD64F2319EVTE25
Manufacturer Part Number
HD64F2319EVTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2319EVTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F2319EVTE25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
HD64F2319EVTE25V
Manufacturer:
RENESAS
Quantity:
210
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17.29.2 AC Characteristics and Timing in PROM Mode
Table 17.65 AC Characteristics in Memory Read Mode
Condition: V
Code
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
WE rise time
WE fall time
I/O7-0
A18-0
WE
CE
OE
Note : Data is latched at the rising edge of WE.
CC
= 3.3 V ± 0.3 V, V
Figure 17.88 Memory Read Timing after Command Write
t
ces
Command write
tf
t
ds
t
wep
SS
= 0 V, T
t
tr
ceh
Symbol
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
r
f
t
dh
a
= 25˚C ± 5˚C
t
nxtc
Min
20
0
0
50
50
70
—
—
Rev.7.00 Feb. 14, 2007 page 781 of 1108
Memory read mode
Address stable
Max
—
—
—
—
—
—
30
30
REJ09B0089-0700
Section 17 ROM
Unit
μs
ns
ns
ns
ns
ns
ns
ns
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