HD64F2623FA20J Renesas Electronics America, HD64F2623FA20J Datasheet - Page 704

• Manufacturer Part Number: HD64F2623FA20J
• Description: IC H8S MCU FLASH 256K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2623FA20J

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 19 ROM (Preliminary)
19.11.9 Notes on Memory Programming
1. When programming addresses which have previously been programmed, carry out auto-
2. When performing programming using programmer mode on a chip that has been
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas.
Rev. 5.00 Jan 10, 2006 page 678 of 1042
REJ09B0275-0500
erasing before auto-programming.
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
FWE
RES
Note: When using other than the automatic write mode and automatic erase mode, drive the FWE
V
CC
Figure 19.25 Oscillation Stabilization Time, Boot Program Transfer Time, and
2. Auto-programming should be performed once only on the same address block.
input pin low.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
Additional programming cannot be performed on previously programmed address
blocks.
t
osc1
t
bmv
Memory read
mode
Command
wait state
Power-Down Sequence
Auto-program mode
Auto-erase mode
Command wait state
Normal/abnormal
end decision
t
dwn