DF2315VTE25 Renesas Electronics America, DF2315VTE25 Datasheet - Page 647
DF2315VTE25
Manufacturer Part Number
DF2315VTE25
Description
MCU 3V 384K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2315VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2315VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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17.11.4 Memory Read Mode
• After the end of an auto-program, auto-erase, or status read operation, the command wait state
• Command writes can be performed in memory read mode, just as in the command wait state.
• Once memory read mode has been entered, consecutive reads can be performed.
• After power-on, memory read mode is entered.
Table 17.16 AC Characteristics in Memory Read Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
A
Figure 17.22 Memory Read Mode Timing Waveforms after Command Write
Note: Data is latched at the rising edge of WE.
18
to A
Data
WE
OE
CE
0
CC
= 3.3 V ±0.3 V, V
t
ces
t
Command write
f
Symbol
t
t
t
t
t
t
t
t
nxtc
ceh
ces
dh
ds
wep
r
f
SS
t
wep
t
ds
H'00
= 0 V, T
t
dh
t
t
ceh
r
a
= 25°C ±5°C
Min
20
0
0
50
50
70
—
—
t
nxtc
Rev.7.00 Feb. 14, 2007 page 613 of 1108
Max
—
—
—
—
—
—
30
30
Memory read mode
Address stable
Data
REJ09B0089-0700
Unit
μs
ns
ns
ns
ns
ns
ns
ns
Section 17 ROM
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