DF2315VTE25 Renesas Electronics America, DF2315VTE25 Datasheet - Page 710
DF2315VTE25
Manufacturer Part Number
DF2315VTE25
Description
MCU 3V 384K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2315VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2315VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 17 ROM
Table 17.39 AC Characteristics in Memory Read Mode
Conditions: V
Item
Access time
CE output delay time
OE output delay time
Output disable delay time
Data output hold time
Rev.7.00 Feb. 14, 2007 page 676 of 1108
REJ09B0089-0700
I/O
I/O
A
A
7
7
18
18
to I/O
to I/O
to A
to A
WE
WE
OE
OE
CE
CE
0
0
0
0
VIH
CC
VIH
VIL
VIL
Figure 17.54 Timing Waveforms for CE/OE Enable State Read
= 3.3 V ±0.3 V, V
Figure 17.55 Timing Waveforms for CE/OE Clocked Read
Address stable
t
acc
t
acc
Address stable
Symbol
t
t
t
t
t
acc
ce
oe
df
oh
t
ce
SS
t
oe
= 0 V, T
t
oh
a
= 25°C ±5°C
Min
—
—
—
—
5
t
oh
t
df
t
Address stable
acc
Address stable
t
acc
Max
20
150
150
100
—
t
ce
t
oe
t
oh
Unit
μs
ns
ns
ns
ns
t
oh
t
df
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