DF2315VTE25 Renesas Electronics America, DF2315VTE25 Datasheet - Page 857
DF2315VTE25
Manufacturer Part Number
DF2315VTE25
Description
MCU 3V 384K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2315VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2315VTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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(2) Control Signal Timing
Table 20.5 Control Signal Timing
Condition A: V
Condition B: V
Item
RES setup time
RES pulse width
NMI setup time
NMI hold time
NMI pulse width (in recovery
from software standby mode)
IRQ setup time
IRQ hold time
IRQ pulse width (in recovery
from software standby mode)
0 V, φ = 2 MHz to 20 MHz, T
T
0 V, φ = 2 MHz to 25 MHz, T
T
a
a
CC
CC
= –40°C to 85°C (wide-range specifications)
= –40°C to 85°C (wide-range specifications)
= 2.7 V to 3.6 V, AV
= 3.0 V to 3.6 V, AV
Symbol
t
t
t
t
t
t
t
t
RESS
RESW
NMIS
NMIH
NMIW
IRQS
IRQH
IRQW
CC
CC
= 2.7 V to 3.6 V, V
= 3.0 V to 3.6 V, V
a
a
Min
200
20
150
10
200
150
10
200
= –20°C to 75°C (regular specifications),
= –20°C to 75°C (regular specifications),
Condition A
—
—
—
—
—
—
—
—
Max
Rev.7.00 Feb. 14, 2007 page 823 of 1108
Section 20 Electrical Characteristics
ref
ref
Min
200
20
150
10
200
150
10
200
Condition B
= 2.7 V to AV
= 3.0 V to AV
Max
—
—
—
—
—
—
—
—
Unit
ns
t
ns
ns
CC
CC
cyc
REJ09B0089-0700
, V
, V
SS
SS
Test
Conditions
Figure 20.4
Figure 20.5
= AV
= AV
SS
SS
=
=
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