LM2902WDT STMicroelectronics, LM2902WDT Datasheet - Page 5

IC OPAMP QUAD LP 1.3MHZ 14-SOIC

LM2902WDT

Manufacturer Part Number
LM2902WDT
Description
IC OPAMP QUAD LP 1.3MHZ 14-SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of LM2902WDT

Amplifier Type
General Purpose
Number Of Circuits
4
Slew Rate
0.4 V/µs
Gain Bandwidth Product
1.3MHz
Current - Input Bias
20nA
Voltage - Input Offset
2000µV
Current - Supply
1.5mA
Current - Output / Channel
20mA
Voltage - Supply, Single/dual (±)
3 V ~ 30 V, ±1.5 V ~ 15 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LM2902WDT
Manufacturer:
TAIYO
Quantity:
3 123
Part Number:
LM2902WDT
Manufacturer:
ST
0
LM2902W
Table 3.
1. V
2. The direction of the input current is out of the IC. This current is essentially constant, independent of the state of the output,
3. Due to the proximity of external components ensure that stray capacitance does not cause coupling between these
V
Symbol
O1
GBP
THD
V
SR
so there is no change in the load on the input lines.
external parts. This typically can be detected as this type of capacitance increases at higher frequencies.
e
OL
/V
O
n
= 1.4 V, R
O2
Low level output voltage
Slew rate
Gain bandwidth product
Total harmonic distortion
Equivalent input noise voltage
Channel separation
V
(unless otherwise stated) (continued)
CC
S
= 0 Ω, 5 V < V
+
= 5 V, V
Parameter
CC
CC
-
(3)
= Ground, V
+
< 30 V, 0 V < V
R
R
V
R
T
V
C
f = 1kHz, A
V
f = 1kHz, R
1kHz ≤ f ≤ 20kHz
min
CC
CC
o
L
L
L
L
O
ic
= 2V
= 10kΩ, T
= 10kΩ, T
= 2kΩ , C
= 100pF
= 1.4 V, T
+ = 15V, V
+ = 30V, V
< V
< T
CC
pp
op
Test conditions
, C
+
< T
V
S
- 1.5 V.
L
L
= 20dB, R
= 100Ω , V
= 100pF, unity gain
amb
min
= 100pF, V
max
in
amb
in
= 10mV, R
= 0.5 to 3V,
≤ T
= +25°C
= 25° C
amb
CC
L
CC
≤ T
= 2kΩ ,
+ = 30V
L
+= 30V
max
= 2kΩ ,
Min.
0.24
0.14
Electrical characteristics
0.015
Typ.
120
0.4
1.3
40
5
Max.
20
20
nV/
V/µs
MHz
Unit
mV
dB
%
5/18
Hz

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