LH0002CN National Semiconductor, LH0002CN Datasheet - Page 2

• Manufacturer Part Number: LH0002CN
• Description: IC CURRENT AMP 10 DIP
• Manufacturer: National Semiconductor

Specifications of LH0002CN

• Amplifier Type: Buffer
• Number Of Circuits: 1
• Slew Rate: 200 V/µs
• Current - Input Bias: 6µA
• Current - Supply: 6mA
• Current - Output / Channel: 100mA
• Voltage - Supply, Single/dual (±): ±5 V ~ 20 V
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 10-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Output Type: -
• -3db Bandwidth: -
• Gain Bandwidth Product: -
• Voltage - Input Offset: -
• Other names: *LH0002CN; LH0002

Voltage Gain
Input Impedance
Output Impedance
Output Voltage Swing
Output Voltage Swing
DC Output Offset Voltage
DC Input Bias Current
Harmonic Distortion
Rise Time
Positive Supply Current
Negative Supply Current
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
(Note 2)
Supply Voltage
Power Dissipation (Note 4)
Input Voltage
Storage Temperature Range
Junction Temperature
Steady State Output Current
Pulsed Output Current (50 ms On 1 sec Off)
Lead Temperature Soldering (10 seconds)
ESD Rating (Note 6)
Electrical Characteristics
Note 1 Specification applies for T
Pins 4 and 5 for the dual-in-line package unless otherwise specified The parameter guarantees for LH0002C apply over the temperature range of 0 C to
while parameters for the LH0002 are guaranteed over the temperature range
Note 2 Refer to RETS0002X for LH0002 military specifications
Note 3 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur Operating Ratings indicate conditions for which the device is
intended to be functional but do not guarantee specific performance limits For guaranteed specifications and test conditions see the Electrical Characteristics
The guaranteed specifications apply only for the test conditions listed
Note 4 The maximum power dissipation is a function of maximum junction temperature (T
maximum allowable power dissipation at any ambient is P
Note 5 For operating at elevated temperatures the device must be derated based on the thermal resistance
Note 6 Human body model 1 5 k
N Package
H Package
Metal Can
Plastic
Parameter
A
(Equal to Power Supply Voltage)
R
R
V
R
V
R
R
V
R
R
R
e
in series with 100 pF
IN
S
IN
S
S
L
S
S
L
S
S
25 C with
e
e
e
e
e
e
e
e
e
e
e
1 0 k
50
10 k
200 k
g
300
10 k
10 k
10 k
5 0 Vrms f
g
15V V
1 0V R
a
12V on Pins 1 and 2
b
R
V
R
R
R
R
V
(Note 1)
V
L
IN
IN
65 C to
L
L
L
L
IN
IN
L
e
e
e
e
e
e
e
D
e
e
e
e
(Note 3)
1 0 k
e
1 0 k
1 0 k
1 0 k
1 0 k
100 mV
g
50
g
1 0 kHz
(T
g
g
g
12V R
12V
600 mW
a
a
a
J
100 mA
400 mA
1 0V R
Max
g
150 C
150 C
175 C
300 C
260 C
Conditions
R
2 kV
22V
V
S
b
IN
S
b
e
T
L
e
12V on Pins 6 and 7 for the metal can package and
A
e
)
10 k
e
b
50
g
2
JA
55 C to
1 0 k
10V
Operating Ratings
Temperature Range
Thermal Resistance (Note 5)
R
L
LH0002
LH0002C
a
J
JA
JC
JA
e
Max) total thermal resistance (
125 C unless otherwise specified
100
H Package
H Package
N Package
T
A
e
25 C
JA
and T
J
0 95
g
g
Min
180
Max T
JA
10
10
) and ambient temperature (T
(Note 3)
a
J
12V on Pins 1 and 2
e
a
b
g
0 97
g
g
Typ
400
6 0
0 1
7 0
T
A
6 0
6 0
6 0
11
10
a
b
P
55 C to
D JA
0 C to
Max
g
g
a
b
10
12
a
a
30
10
10
10
a
125 C W
120 C W
a
75 C W
b
a
125 C
a
12V on
A
85 C
) The
Units
85 C
mV
mA
mA
k
%
ns
V
V
A