NE5517AN ON Semiconductor, NE5517AN Datasheet

IC AMP XCONDUCTANCE DUAL 16-DIP

NE5517AN

Manufacturer Part Number
NE5517AN
Description
IC AMP XCONDUCTANCE DUAL 16-DIP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NE5517AN

Amplifier Type
Transconductance
Number Of Circuits
2
Output Type
Push-Pull
Slew Rate
50 V/µs
Gain Bandwidth Product
2MHz
Current - Input Bias
400nA
Voltage - Input Offset
400µV
Current - Supply
2.6mA
Current - Output / Channel
650µA
Voltage - Supply, Single/dual (±)
4 V ~ 44 V, ±2 V ~ 22 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Number Of Channels
2
Input Offset Voltage
2 mV
Supply Voltage (max)
44 V
Supply Current
4 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Common Mode Rejection Ratio (min)
80 dB
Input Voltage Range (max)
Positive Rail - 3 V
Maximum Power Dissipation
1500 mW
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
-3db Bandwidth
-
Lead Free Status / Rohs Status
No RoHS Version Available

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE5517AN
Manufacturer:
AMI
Quantity:
6 231
NE5517, NE5517A, AU5517
Dual Operational
Transconductance Amplifier
transconductance amplifiers, each with a differential input and
push-pull output. The AU5517/NE5517 offers significant design and
performance advantages over similar devices for all types of
programmable gain applications. Circuit performance is enhanced
through the use of linearizing diodes at the inputs which enable a
10 dB signal-to-noise improvement referenced to 0.5% THD. The
AU5517/NE5517 is suited for a wide variety of industrial and
consumer applications.
the AU5517/NE5517. These buffers are made of Darlington
transistors and a biasing network that virtually eliminate the change of
offset voltage due to a burst in the bias current I
the audible noise that could otherwise be heard in high quality audio
applications.
Features
Applications
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
The AU5517 and NE5517 contain two current-controlled
Constant impedance of the buffers on the chip allow general use of
Constant Impedance Buffers
DV
Excellent Matching Between Amplifiers
Linearizing Diodes
High Output Signal-to-Noise Ratio
Pb−Free Packages are Available*
Multiplexers
Timers
Electronic Music Synthesizers
Dolby® HX Systems
Current-Controlled Amplifiers, Filters
Current-Controlled Oscillators, Impedances
BE
of Buffer is Constant with Amplifier I
ABC
BIAS
, hence eliminating
Change
1
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
1
VO
1
IN
BUFFERa
BUFFERa
ORDERING INFORMATION
I
ABCa
xx
yy
A
WL
YY, Y = Year
WW
G
+IN
−IN
VO
D
V−
CASE 751B
PIN CONNECTIONS
a
a
a
a
http://onsemi.com
CASE 648
D SUFFIX
N SUFFIX
SOIC−16
PDIP−16
1
2
3
4
5
6
7
8
= AU or NE
= AN or N
= Assembly Location
= Wafer Lot
= Work Week
= Pb−Free Package
N, D Packages
(Top View)
Publication Order Number:
1
1
16
15
14
13
12
11
10
DIAGRAMS
AWLYYWWG
9
MARKING
xx5517DG
NE5517yy
AWLYWW
I
D
+IN
−IN
VO
V+
IN
VO
ABCb
b
BUFFERb
b
BUFFERb
b
b
NE5517/D

Related parts for NE5517AN

NE5517AN Summary of contents

Page 1

... Dolby® HX Systems • Current-Controlled Amplifiers, Filters • Current-Controlled Oscillators, Impedances *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev hence eliminating ...

Page 2

PIN DESCRIPTION Pin No. Symbol 1 I ABCa + − V− BUFFERa 8 VO BUFFERa 9 VO BUFFERb 10 IN BUFFERb ...

Page 3

... Differential Input Voltage Diode Bias Current Amplifier Bias Current Output Short-Circuit Duration Buffer Output Current (Note 3) Operating Temperature Range NE5517N, NE5517AN AU5517T Operating Junction Temperature DC Input Voltage Storage Temperature Range Lead Soldering Temperature (10 sec max) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied ...

Page 4

ELECTRICAL CHARACTERISTICS Test Conditions Characteristic Input Offset Voltage Overtemperature Range DV /DT Avg Input Offset Voltage OS V Including Diodes Diode Bias Current OS (I 5.0 mA ≤ I Input Offset Change Input Offset Current DI /DT Avg. ...

Page 5

TYPICAL PERFORMANCE CHARACTERISTICS ±15V +125°C 1 -55° +25°C +125° 0.1mA 1mA 10mA 100mA 1000mA AMPLIFIER BIAS CURRENT (I ) ABC Figure 3. Input Offset ...

Page 6

TYPICAL PERFORMANCE CHARACTERISTICS 2000 1800 -55°C 1600 1400 +25°C 1200 1000 +125°C 800 600 400 200 0 0.1mA 1mA 10mA 100mA 1000mA AMPLIFIER BIAS CURRENT (I ) ABC Figure 12. Amplifier Bias Voltage vs. Amplifier Bias Current ...

Page 7

INPUT 51W CIRCUIT DESCRIPTION The circuit schematic diagram of one-half of the AU5517/NE5517, a dual operational transconductance amplifier with linearizing diodes and impedance buffers, is shown in Figure 21. Transconductance Amplifier The transistor pair, Q and Q , forms ...

Page 8

Linearizing Diodes For V greater than a few millivolts, Equation 3 becomes IN invalid and the transconductance increases non-linearly. Figure 22 shows how the internal diodes can linearize the transfer function of the operational amplifier. Assume D and D are ...

Page 9

Stereo Amplifier With Gain Control Figure 24 shows a stereo amplifier with variable gain via a control input. Excellent tracking of typical 0 easy to achieve. With the potentiometer, R adjusted. For AC-coupled amplifiers, the potentiometer may be ...

Page 10

Voltage-Controlled Resistor (VCR) Because an OTA is capable of producing an output current proportional to the input voltage, a voltage variable resistor can be made. Figure 26 shows how this is done. A voltage presented at the R terminals forces ...

Page 11

V IN 200W NOTE g(R ) RA) 2pC O Figure 28. Voltage-Controlled Low-Pass Filter +V CC 100kW V OS NULL -V CC 1kW NOTE g(R ) RA) ...

Page 12

CC 10kW NE5517/A − 6 1kW −V CC 30kW − NE5517 −V CC Figure 32. Triangle−Square Wave Generator (VCO 470kW 1 V ...

Page 13

... NE5517D NE5517DG NE5517DR2 NE5517DR2G NE5517N NE5517NG NE5517AN NE5517ANG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NE5517, NE5517A, AU5517 Temperature Range Package SOIC−16 −40 to +125 °C SOIC− ...

Page 14

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. ...

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