SI4947ADY-T1-GE3 Vishay, SI4947ADY-T1-GE3 Datasheet - Page 4
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SI4947ADY-T1-GE3
Manufacturer Part Number
SI4947ADY-T1-GE3
Description
MOSFET P-CH 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4947ADY-T1-E3.pdf
(5 pages)
Specifications of SI4947ADY-T1-GE3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 3.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Module Configuration
Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
-3A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
62mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4947ADY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4947ADY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4947ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71101.
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.05
0.02
0.02
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
0.2
0.1
Single Pulse
0
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
Single Pulse
50
10
I
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
0.05
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
30
24
18
12
10
1
6
0
10
-1
-2
Single Pulse Power, Junction-to-Ambient
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
1
S09-0870-Rev. D, 18-May-09
A
1
= P
1
t
2
Document Number: 71101
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 87 °C/W
10
600
10
100