NDF10N62ZG ON Semiconductor, NDF10N62ZG Datasheet - Page 4

• Manufacturer Part Number: NDF10N62ZG
• Description: MOSFET N-CH 620V .75OHM TO220FP
• Manufacturer: ON Semiconductor

Specifications of NDF10N62ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1425pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Forward Transconductance Gfs (max / Min): 7.9 S
• Drain-source Breakdown Voltage: 620 V
• Continuous Drain Current: 5.7 A, 10 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 47 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDF10N62ZG; NDF10N62ZGOS

20
15
10
0.01
5
0
100
0.1
10
10
0
8
6
4
2
0
1
0
0.4
Q
V
gs
Figure 7. Drain−to−Source Leakage Current
5
GS
Drain−to−Source Voltage vs. Total Charge
V
T
J
GS
= 0 V
100
= 25°C
V
10
Figure 11. Diode Source Current vs.
V
0.5
SD
DS
= 0 V
V
Figure 9. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q
15
g
, TOTAL GATE CHARGE (nC)
200
0.6
20
Forward Voltage
Q
vs. Voltage
gd
T
J
QT
T
300
25
= 150°C
J
= 100°C
0.7
30
400
35
0.8
V
I
T
D
TYPICAL CHARACTERISTICS
J
DS
= 10 A
40
500
= 25°C
= 310 V
0.9
V
45
GS
http://onsemi.com
600
50
1.0
400
300
200
100
0
4
1000
3500
3000
2500
2000
1500
1000
100
0.01
500
100
0.1
10
10
1
0
1
1
0
1
Figure 10. Resistive Switching Time Variation
V
I
V
R
Thermal Limit
Package Limit
D
Figure 12. Maximum Rated Forward Biased
V
Single Pulse
T
DD
GS
DS(on)
= 10 A
C
GS
C
Mounted on 2″ sq. FR4
board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one
die operating
25
= 310 V
= 10 V
= 25°C
Safe Operating Area for NDF10N62Z
rss
V
= 10 V
V
C
C
DS
DS
Figure 8. Capacitance Variation
Limit
oss
iss
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
50
R
G
, GATE RESISTANCE (W)
vs. Gate Resistance
10
75
100
10
1 ms
125
100 ms
100
150
V
T
GS
J
= 25°C
10 ms
= 0 V
10 ms
175
dc
t
t
t
t
d(off)
r
d(on)
f
1000
200
100