FDME410NZT Fairchild Semiconductor, FDME410NZT Datasheet

MOSFET N-CH 20V 7A 6-MICROFET

FDME410NZT

Manufacturer Part Number
FDME410NZT
Description
MOSFET N-CH 20V 7A 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDME410NZT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1025pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
19 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
7 A
Power Dissipation
1.4 W
Forward Transconductance Gfs (max / Min)
35 S
Gate Charge Qg
9.2 nC
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDME410NZTTR
©2010 Fairchild Semiconductor Corporation
FDME410NZT Rev.C1
FDME410NZT
N-Channel PowerTrench
20 V, 7 A, 26 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
Pin 1
DS
GS
D
J
θJA
θJA
Max r
Max r
Max r
Max r
Low profile:
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1800V (Note3)
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
BOTTOM
D
6T
= 26 mΩ at V
= 31 mΩ at V
= 39 mΩ at V
= 53 mΩ at V
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
0.55 mm maximum in the new package
G
GS
GS
GS
GS
MicroFET 1.6x1.6 Thin
FDME410NZT
D
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
Device
-Pulsed
D
D
D
D
D
S
= 7 A
= 6 A
= 5 A
= 4 A
T
®
A
= 25 °C unless otherwise noted
MOSFET
MicroFET 1.6x1.6 Thin
Parameter
Package
TOP
1
T
T
T
A
A
A
= 25 °C
= 25 °C
= 25 °C
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the r
leadframe.
Applications
Li-lon Battery Pack
Baseband Switch
Load Switch
DC-DC Conversion
Reel Size
DS(ON)
7 ’’
D
G
D
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
@ VGS = 1.5 V on special MicroFET
Tape Width
8 mm
-55 to +150
Ratings
175
2.1
0.7
20
±8
15
60
7
www.fairchildsemi.com
April 2010
5000 units
Quantity
Units
°C/W
°C
W
V
V
A
D
D
S

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FDME410NZT Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 6T FDME410NZT ©2010 Fairchild Semiconductor Corporation FDME410NZT Rev.C1 ® MOSFET General Description This Single N-Channel MOSFET has been designed using = Fairchild Semiconductor’s advanced Power Trench process optimize the leadframe ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDME410NZT Rev. °C unless otherwise noted J Test Conditions = 250 µ ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDME410NZT Rev. °C unless otherwise noted 2.5 V µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.6 0.8 1 100 125 150 ...

Page 4

... GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage 300 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDME410NZT Rev. °C unless otherwise noted Figure 10. Forward Bias Safe Operating Area - PULSE WIDTH (sec) 4 5000 C iss 1000 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDME410NZT Rev. °C unless otherwise noted J SINGLE PULSE o R =175 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDME410NZT Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDME410NZT Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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