SI4447DY-T1-GE3 Vishay, SI4447DY-T1-GE3 Datasheet - Page 2
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SI4447DY-T1-GE3
Manufacturer Part Number
SI4447DY-T1-GE3
Description
MOSFET P-CH D-S 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4447DY-T1-E3.pdf
(6 pages)
Specifications of SI4447DY-T1-GE3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
72 mOhm @ 4.5A, 15V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
805pF @ 20V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-3.3A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2.2V
Power Dissipation Pd
1.1W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4447DY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4447DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4447DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate-Source Threshold Voltage
V
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
20
16
12
8
4
0
0
a
a
1
V
DS
a
Output Characteristics
- Drain-to-Source Voltage (V)
J
V
GS
= 25 °C, unless otherwise noted
= 10 V thru 4 V
2
a
3
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
I
I
C
DS(on)
V
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
DS
g
Q
R
Q
t
SD
oss
t
t
rss
iss
rr
fs
gs
gd
r
f
3 V
g
rr
g
/T
/T
J
4
J
V
V
DS
V
I
D
DS
DS
≅ - 1 A, V
5
= - 20 V, V
I
= - 40 V, V
F
V
V
= - 20 V, V
V
V
V
V
V
V
I
= 1.7 A, dI/dt = 100 A/µs
DS
DS
GS
GS
DS
DS
S
DD
DS
= - 1.7 A, V
Test Conditions
= V
≤ - 5 V, V
= - 10 V, I
= - 15 V, I
= - 15 V, I
= 0 V, V
= - 40 V, V
= - 15 V, R
I
D
GEN
f = 1 MHz
GS
= - 250 µA
GS
GS
GS
, I
= - 4.5 V, I
= - 10 V, R
D
GS
= 0 V, T
= 0 V, f = 1 MHz
GS
D
= - 250 µA
D
D
GS
GS
L
= ± 16 V
= - 4.5 A
= - 4.5 A
= - 4.5 A
= - 10 V
= 15 Ω
= 0 V
= 0 V
J
20
16
12
D
8
4
0
= 55 °C
g
= - 4.5 A
0.0
= 6 Ω
0.5
V
1.0
GS
Transfer Characteristics
Min.
- 0.8
- 20
- Gate-to-Source Voltage (V)
1.5
- 0.79
0.045
0.059
S09-0322-Rev. B, 02-Mar-09
Typ.
11.5
- 40
805
120
3.4
3.6
2.0
13
85
12
74
38
27
17
9
2
8
Document Number: 73662
T
C
2.5
25 °C
= - 55 °C
± 100
0.054
0.072
Max.
- 2.2
- 1.2
- 10
110
- 1
14
18
13
18
60
45
26
3.0
125 °C
3.5
mV/°C
Unit
nA
µA
pF
nC
nC
ns
Ω
Ω
V
A
S
V
4.0