FDMS2506SDC Fairchild Semiconductor, FDMS2506SDC Datasheet - Page 5

• Manufacturer Part Number: FDMS2506SDC
• Description: MOSFET N-CH 25V DUAL POWER56
• Manufacturer: Fairchild Semiconductor
• Series: Dual Cool™, PowerTrench®, SyncFET™r

Specifications of FDMS2506SDC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.45 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 5945pF @ 13V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.45 mOhms
• Forward Transconductance Gfs (max / Min): 171 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 49 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS2506SDCTR

©2010 Fairchild Semiconductor Corporation
FDMS2506SDC Rev.C
Typical Characteristics
0.01
500
100
10
50
10
0.1
10
8
6
4
2
0
1
Figure 7.
0.01
1
0.01
0
Figure 9.
THIS AREA IS
LIMITED BY r DS
SINGLE PULSE
T
R
T
I
Figure 11. Forward Bias Safe
D
J
A
θ
JA
= MAX RATED
= 30 A
= 25
10
= 81
Switching Capability
0.1
V
o
C
Gate Charge Characteristics
DS
t
0.1
o
AV
C/W
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
20
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
g
(
on
, GATE CHARGE (nC)
)
V
30
DD
1
= 10 V
T
1
J
= 125
40
T
V
T
J
DD
J
= 25
o
10
= 25 °C unless otherwise noted
C
= 13 V
o
50
10
T
C
J
= 100
V
DD
100
= 16 V
60
o
10 ms
100 ms
1 ms
1 s
10 s
100 us
DC
C
100
500
70
200
5
10000
10000
1000
1000
250
200
150
100
100
100
50
0.5
10
0
Figure 10.
0.1
25
1
10
Figure 12.
-4
f = 1 MHz
V
Figure 8.
GS
Current vs Case Temperature
Limited by package
V
GS
= 0 V
10
= 4.5 V
V
-3
50
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
C
t, PULSE WIDTH (sec)
10
Single Pulse Maximum
,
Capacitance vs Drain
V
CASE TEMPERATURE (
GS
-2
= 10 V
75
1
10
-1
100
1
R
SINGLE PULSE
R
T
10
o
θ
C )
A
θ
JC
JA
= 25
125
= 1.4
10
www.fairchildsemi.com
= 81
C
C
C
o
100
oss
C
rss
iss
o
o
C/W
C/W
150
1000
30