CMPA0060002F Cree Inc, CMPA0060002F Datasheet

TRANS RF GAN HEMT MMIC 780019PKG

CMPA0060002F

Manufacturer Part Number
CMPA0060002F
Description
TRANS RF GAN HEMT MMIC 780019PKG
Manufacturer
Cree Inc
Datasheet

Specifications of CMPA0060002F

Frequency
20MHz ~ 6GHz
Gain
18.8dB
Package / Case
780019
Test Frequency
500MHz
Voltage - Supply
2 V ~ 28 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Supply
-
Rf Type
-
Noise Figure
-
P1db
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CMPA0060002F
Manufacturer:
CREE
Quantity:
1 400
Part Number:
CMPA0060002F-TB
Manufacturer:
PANASONIC
Quantity:
10 001
Typical Performance Over 20 MHz - 6.0 GHz
Note
Note
CMPA0060002F
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared
to Si and GaAs transistors. This MMIC employs a distributed
(traveling-wave) amplifier design approach, enabling extremely
wide bandwidths to be achieved in a small footprint screw-down
package featuring a copper-tungsten heat sink.
Features
Parameter
Gain
Saturated Output Power, P
Power Gain @ P
PAE @ P
1
2
: P
: V
SAT
DD
17 dB Small Signal Gain
3 W Typical P
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
0.5” x 0.5” total product size
SAT
= 28 V, I
is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.
1
SAT
1
DQ
= 100 mA
SAT
SAT
1
20 MHz
19.9
14.7
4.3
34
0.5 GHz
Subject to change without notice.
18.8
13.1
4.1
28
www.cree.com/wireless
Applications
1.0 GHz
17.8
12.6
4.5
29
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier
Drivers
2.0 GHz
16.8
12.2
(T
4.2
28
C
= 25˚C)
3.0 GHz
16.8
12.6
3.7
24
4.0 GHz
17.5
10.9
3.9
26
5.0 GHz
18.5
12.2
4.8
33
6.0 GHz
16.5
3.7
9.5
20
Units
dB
dB
W
%
1

Related parts for CMPA0060002F

CMPA0060002F Summary of contents

Page 1

... CMPA0060002F MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors ...

Page 2

... Maximum Forward Gate Current Soldering Temperature 1 Screw Torque Thermal Resistance, Junction to Case Case Operating Temperature 2,3 Note: Refer to the Application Note on soldering at 1 Measured for the CMPA0060002F Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated; T Characteristics Symbol DC Characteristics Gate Threshold Voltage V 1 ...

Page 3

... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA0060002F Rev 2.2 Small Signal Gain and Return Losses vs Frequency ...

Page 4

... Copyright © 2009-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA0060002F Rev 2.2 3.0 4.0 5.0 PAE at 33 & ...

Page 5

... The wideband amplifier’s input and output are internally matched to 50 Ohm. The amplifier requires bias from appropriate Bias-T’s, through the RF input and output ports. The CMPA0060002F is provided in a flange package format. The input and output connections are gold plated to enable gold bond wire attach at the next level assembly. ...

Page 6

... CMPA0060002F-TB Demonstration Amplifier Circuit CMPA0060002F-TB Demonstration Copyright © 2009-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association ...

Page 7

... CMPA0060002F-TB Demonstration Designator J1, Notes The CMPA0060002F is connected to the PCB with 2.0 mil Au bond wires external bias T is required. 2 Product Dimensions CMPA0060002F (Package Type — 780019) Copyright © 2009-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 8

... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA0060002F Rev 2.2 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

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