CMPA0060025F Cree Inc, CMPA0060025F Datasheet

IC AMP MMIC HEMT 25W 780019PKG

CMPA0060025F

Manufacturer Part Number
CMPA0060025F
Description
IC AMP MMIC HEMT 25W 780019PKG
Manufacturer
Cree Inc
Datasheet

Specifications of CMPA0060025F

Current - Supply
20mA ~ 12A
Frequency
20MHz ~ 6GHz
Gain
17dB
Package / Case
780019
Test Frequency
20MHz ~ 6GHz
Voltage - Supply
10 V ~ 50 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rf Type
-
Noise Figure
-
P1db
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CMPA0060025F
Manufacturer:
CREE
Quantity:
101
Part Number:
CMPA0060025F-TB
Manufacturer:
TI
Quantity:
12
Typical Performance Over 20 MHz - 6.0 GHz
Note
Note
CMPA0060025F
25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to Si
and GaAs transistors. This MMIC enables extremely wide bandwidths
to be achieved in a small footprint screw-down package.
Features
Parameter
Gain
Output Power @ P
Power Gain @ P
Efficiency @ P
1
2
: P
: V
SAT
DD
17 dB Small Signal Gain
25 W Typical P
Operation up to 50 V
High Breakdown Voltage
High Temperature Operation
0.5” x 0.5” total product size
= 50 V, I
is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.
IN
SAT
= 32 dB
1
IN
DQ
= 32 dB
= 500 mA
SAT
20 MHz
21.4
26.9
12.3
63
0.5 GHz
Subject to change without notice.
20.1
30.2
12.8
55
www.cree.com/wireless
Applications
1.0 GHz
19.3
26.3
12.2
40
Ultra Broadband Amplifiers
Test Instrumentation
EMC Amplifier
Drivers
2.0 GHz
16.7
23.4
11.7
(T
31
C
= 25˚C)
3.0 GHz
16.6
24.5
11.9
33
4.0 GHz
16.8
24.0
11.8
31
5.0 GHz
15.7
20.9
11.3
28
6.0 GHz
15.5
18.6
10.7
26
Units
dB
dB
W
%
1

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CMPA0060025F Summary of contents

Page 1

... CMPA0060025F MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors ...

Page 2

... Maximum Forward Gate Current Soldering Temperature 1 Screw Torque Thermal Resistance, Junction to Case Case Operating Temperature 2,3 Note: Refer to the Application Note on soldering at 1 Measured for the CMPA0060025F Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated; T Characteristics Symbol DC Characteristics Gate Threshold Voltage V ...

Page 3

... Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA0060025F Rev 1.1, Preliminary 0 -5 -10 ...

Page 4

... Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA0060025F Rev 1.1, Preliminary Power Gain ...

Page 5

... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA0060025F Rev 1.1, Preliminary Efficiency vs Input Power Function of Frequency 70% ...

Page 6

... General Device Information The CMPA0060025F is a GaN HEMT MMIC Power Amplifier, which operates between 20 MHz - 6.0 GHz. The amplifier typically provides small signal gain and 25 W saturated output power with an associated power added efficiency of better than 20 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. ...

Page 7

... CMPA0060025F Power Dissipation De-rating Curve Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association ...

Page 8

... CMPA0060025F-TB Demonstration Amplifier Circuit CMPA0060025F-TB Demonstration Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association ...

Page 9

... CMPA0060025F-TB Demonstration Designator J1, Notes The CMPA0060025F is connected to the PCB with 2.0 mil Au bond wires external bias T is required. 2 Product Dimensions CMPA0060025F (Package Type — 780019) Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 10

... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CMPA0060025F Rev 1.1, Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

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