CMPA2560025F Cree Inc, CMPA2560025F Datasheet

IC AMP MMIC HEMT 25W 780019PKG

CMPA2560025F

Manufacturer Part Number
CMPA2560025F
Description
IC AMP MMIC HEMT 25W 780019PKG
Manufacturer
Cree Inc
Datasheet

Specifications of CMPA2560025F

Current - Supply
20mA ~ 10A
Frequency
2.5GHz ~ 6GHz
Gain
24dB
Package / Case
780019
Test Frequency
2.5GHz ~ 6GHz
Voltage - Supply
6 V ~ 28 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rf Type
-
Noise Figure
-
P1db
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CMPA2560025F
Manufacturer:
CREE
Quantity:
1 400
Part Number:
CMPA2560025F
Manufacturer:
CREE/科锐
Quantity:
20 000
Typical Performance Over 2.5-6.0 GHz
Note
CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively
matched amplifier enabling very wide bandwidths to be achieved in
a small footprint screw-down package featuring a Copper-Tungsten
heat-sink.
Features
Parameter
Gain
Saturated Output Power, P
Power Gain @ P
PAE @ P
1
: P
SAT
24 dB Small Signal Gain
25 W Typical P
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
OUT
43 dBm
OUT
43 dBm
SAT
SAT
1
Subject to change without notice.
www.cree.com/wireless
2.5 GHz
Applications
27.5
35.8
23.1
31.5
(T
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier
Drivers
C
= 25˚C)
4.0 GHz
24.3
37.5
20.9
32.8
6.0 GHz
23.1
25.6
16.3
30.7
Units
dB
dB
%
W
1

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CMPA2560025F Summary of contents

Page 1

... CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity ...

Page 2

... Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA2560025F Rev 2.0 Symbol V DSS ...

Page 3

... Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA2560025F Rev 2.0 Input & Output Return Losses 0 -2 ...

Page 4

... Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA2560025F Rev 2.0 Frequency (GHz) Typical Psat (dBm) 5.0 5 ...

Page 5

... Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CMPA2560025F Rev 2 -10 ...

Page 6

... General Device Information The CMPA2560025F is a two stage GaN HEMT MMIC Power Amplifier, which operates between 2.5- 6.0 GHz. The amplifier typically provides small signal gain and 25 W saturated output power with an associated power added efficiency of better than 30 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. ...

Page 7

... Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CMPA2560025F Rev 2.0 Amplifier Circuit Outline Amplifier Circuit Cree, Inc ...

Page 8

... C4,C5, Notes The CMPA2560025F is connected to the PCB with 2.0 mil Au bond wires external DC Block is required on the input. The output has an internal DC Block 2 Product Dimensions CMPA2560025F (Package Type — 780019) Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 9

... Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CMPA2560025F Rev 2.0 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

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