MWIC930NR1 Freescale Semiconductor, MWIC930NR1 Datasheet

IC PWR AMP RF 30W TO272-16

MWIC930NR1

Manufacturer Part Number
MWIC930NR1
Description
IC PWR AMP RF 30W TO272-16
Manufacturer
Freescale Semiconductor
Type
Power Amplifierr
Datasheet

Specifications of MWIC930NR1

Current - Supply
90mA
Frequency
900MHz
Gain
30dB
Package / Case
TO-272-16
Rf Type
Cellular, GSM, EDGE, N-CDMA
Voltage - Supply
26V
Number Of Channels
1
Frequency (max)
960MHz
Output Power
30@960MHzdBm
Power Supply Requirement
Single
Single Supply Voltage (min)
26V
Single Supply Voltage (typ)
27V
Single Supply Voltage (max)
28V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Pin Count
16
Mounting
Surface Mount
Lead Free Status / RoHS Status
Contains lead / RoHS Compliant
Noise Figure
-
P1db
-
Test Frequency
-
Lead Free Status / Rohs Status
Compliant
Other names
MWIC930NR1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MWIC930NR1
Manufacturer:
FREESCALE
Quantity:
340
Part Number:
MWIC930NR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to
28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband On - Chip integral matching circuitry makes it usable from 790 to
1000 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
• Typical Performance @ P1dB: V
Driver Application
• Typical Single - Carrier N - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
• On - Chip Current Mirror g
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
The MWIC930 wideband integrated circuit is designed for CDMA and
240 mA, P
90 mA, I
(865 - 894 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power
Enable/Disable Function
Select Documentation/Application Notes - AN1987.
Power Gain — 30 dB
Power Added Efficiency — 45%
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — - 52 dBc in 30 kHz Bandwidth
V
V
V
V
V
V
V
RF
RD1
RG1
RD2
RG2
GS1
GS2
DS1
DQ2
in
out
= 240 mA, P
= 30 Watts P1dB, Full Frequency Band (921 - 960 MHz)
Figure 1. Functional Block Diagram
Replaced by MWIC930NR1(GNR1). There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free terminations.
Temperature Compensation
out
m
Quiescent Current
Reference FET for Self Biasing Application
= 5 Watts Avg., Full Frequency Band
DD
= 26 Volts, I
DQ1
DD
= 27 Volts, I
= 90 mA, I
DQ2
DQ1
=
V
=
DS2
/RF
(1)
out
RF LDMOS WIDEBAND INTEGRATED
SINGLE N - CDMA, GSM/GSM EDGE
Note: Exposed backside flag is source
746 - 960 MHz, 30 W, 26 - 28 V
Document Number: MWIC930
V
V
V
V
V
V
GND
V
GND
RF
MWIC930GR1
RD2
RG2
RG1
DS1
RD1
GS1
GS2
Figure 2. Pin Connections
POWER AMPLIFIERS
NC
MWIC930R1
in
TO - 272 WB - 16 GULL
terminal for transistors.
CASE 1329A - 03
TO - 272 WB - 16
CASE 1329 - 09
MWIC930R1 MWIC930GR1
MWIC930GR1
MWIC930R1
10
PLASTIC
11
PLASTIC
2
3
4
5
6
7
8
9
1
(Top View)
Rev. 5, 5/2006
16
15
14
13
12
GND
NC
RF
V
NC
GND
DS2
out/
1

Related parts for MWIC930NR1

MWIC930NR1 Summary of contents

Page 1

... Freescale Semiconductor Technical Data Replaced by MWIC930NR1(GNR1). There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF LDMOS Wideband Integrated Power Amplifiers The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage ( Volts) LDMOS IC technology and integrates a multi - stage structure ...

Page 2

... Package Peak Temperature Unit 260 °C Min Typ Max Unit = 240 mA Avg CDMA, DQ2 out 28 31 — — % — — dBc — — % ±2.5 ±2.5 — 0.3 — dB — 0.6 — ° — 3 — ns — ±15 — ° (continued) RF Device Data Freescale Semiconductor ...

Page 3

... Input Return Loss @ out Intermodulation Distortion ( Tone, 100 kHz Tone Spacing) Intermodulation Distortion ( Tone, 100 kHz Tone Spacing) Gain Flatness MHz Bandwidth @ P Deviation from Linear Phase MHz Bandwidth @ P RF Device Data Freescale Semiconductor continued) = 25°C, unless otherwise noted Symbol P1dB G ps PAE IRL ...

Page 4

... Microstrip PCB Rogers 4350, 0.020″, ε Description Part Number ATC600S150JW ATC600S6R8CW ATC600S8R2CW ATC600S5R6CW ATC600S470JW GRM42- 2X7R105K050AL C0603C103J5R RM73B2AT102J RM73B2BT105J OUTPUT Z10 = 3.50 r Manufacturer ATC ATC ATC ATC Murata Kemet KOA Speer KOA Speer RF Device Data Freescale Semiconductor ...

Page 5

... R4 C14 V G2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MWIC930R1(GR1) Test Circuit Component Layout ...

Page 6

... Vdc = 240 OUTPUT POWER (WATTS) out T = −30_C C 25_C 85_C Vdc (CW) out DQ1 I = 240 mA DQ2 750 800 850 900 950 f, FREQUENCY (MHz Vdc = 85_C C = 240 mA −30_C OUTPUT POWER (WATTS) out versus Output Power RF Device Data Freescale Semiconductor 35 40 1000 25_C 9 10 ...

Page 7

... P , OUTPUT POWER (WATTS) out Figure 11. Power Added Efficiency versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −30_C C 25_C 56 85_C Vdc DQ1 I = 240 mA 42 DQ2 f = 880 MHz 700 750 Figure 12. Power Added Efficiency versus T = −30_C C 25_C 85_C Vdc (CW) out DQ1 I = 240 mA ...

Page 8

... Device input impedance as measured from in RF input to ground. = Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network load RF Device Data Freescale Semiconductor ...

Page 9

... High Q Capacitors C6, C13, C14, C15 1 μF Chip Capacitors C10, C11, C12 10 nF Chip Capacitors R1 kW, 1/8 W Chip Resistors R3 MW, 1/4 W Chip Resistors * For output matching and bypass purposes strongly recommended to use these exact capacitors. RF Device Data Freescale Semiconductor DRIVER/PRE- DRIVER PERFORMANCE ...

Page 10

... TYPICAL CHARACTERISTICS DRIVER/PRE- DRIVER PERFORMANCE ACPR System Noise Floor Vdc 105 mA 230 mA DQ1 DQ2 f = 880 MHz N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through OUTPUT POWER (dBm) out Figure 15. Single - Carrier N - CDMA ACPR versus Output Power 30 RF Device Data Freescale Semiconductor ...

Page 11

... MHz f = 960 MHz Figure 16. Series Equivalent Input and Load Impedance — Alternate Characterization for Driver/Pre - Driver Performance RF Device Data Freescale Semiconductor Ω load Vdc 105 mA 230 mA DQ1 DQ2 out MHz Ω 740 53.944 + j6.745 2.535 + j1.662 54.452 + j7.112 760 2.602 + j1.080 780 55 ...

Page 12

... MWIC930R1 MWIC930GR1 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MWIC930R1 MWIC930GR1 13 ...

Page 14

... MWIC930R1 MWIC930GR1 14 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MWIC930R1 MWIC930GR1 15 ...

Page 16

... MWIC930R1 MWIC930GR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MWIC930R1 MWIC930GR1 17 ...

Page 18

... MWIC930R1 MWIC930GR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... RF Device Data Freescale Semiconductor MWIC930R1 MWIC930GR1 19 ...

Page 20

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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