MW4IC2020NBR1 Freescale Semiconductor, MW4IC2020NBR1 Datasheet

IC PWR AMP RF 26V 20W TO-272-16

MW4IC2020NBR1

Manufacturer Part Number
MW4IC2020NBR1
Description
IC PWR AMP RF 26V 20W TO-272-16
Manufacturer
Freescale Semiconductor
Type
Power Amplifierr
Datasheet

Specifications of MW4IC2020NBR1

Current - Supply
80mA
Frequency
1.6GHz ~ 2.4GHz
Gain
29dB
Package / Case
TO-272-16
Rf Type
Cellular, GSM, EDGE, CDMA
Voltage - Supply
26V
Number Of Channels
1
Power Supply Requirement
Single
Single Supply Voltage (min)
26V
Single Supply Voltage (max)
28V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Pin Count
16
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
P1db
-
Test Frequency
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MW4IC2020NBR1
Manufacturer:
FSL
Quantity:
500
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
matching that makes it usable from 1600 to 2400 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Two - Tone Performance: V
Driver Applications
• Typical GSM EDGE Performance: V
• Typical CDMA Performance: V
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW P
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• On - Chip Current Mirror g
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
The MW4IC2020N wideband integrated circuit is designed with on - chip
200 mA, I
230 mA, I
240 mA, I
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Band-
width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Output Power
Select Documentation/Application Notes - AN1987.
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc in 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc in 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc in 1 MHz Bandwidth
V
V
V
V
V
V
V
RF
RG1
RD1
DS2
DS1
GS1
GS2
GS3
in
DQ3
DQ3
DQ3
= 300 mA, P
= 230 mA, P
= 250 mA, P
Figure 1. Functional Block Diagram
m
out
out
out
Reference FET for Self Biasing Application
Temperature Compensation
= 20 Watts PEP, Full Frequency Band
= 5 Watts Avg., Full Frequency Band
= 1 Watt Avg., Full Frequency Band, IS - 95
DD
Quiescent Current
= 26 Volts, I
DD
DD
= 26 Volts, I
= 26 Volts, I
3 Stages I
DQ1
C
DQ1
= 80 mA, I
DQ1
= 80 mA, I
= 80 mA, I
DQ2
DQ2
=
DQ2
V
=
DS3
=
(1)
/RF
out
out
.
INTEGRATED POWER AMPLIFIERS
MW4IC2020NBR1 MW4IC2020GNBR1
Document Number: MW4IC2020N
MW4IC2020GNBR1
Note: Exposed backside flag is source
MW4IC2020NBR1
1805- 1990 MHz, 20 W, 26 V
Figure 2. Pin Connections
V
V
V
GND
V
V
V
V
GND
GSM/GSM EDGE, CDMA
RF
RF LDMOS WIDEBAND
TO - 272 WB - 16 GULL
GS1
GS2
GS3
DS2
RD1
RG1
DS1
MW4IC2020GNBR1
in
terminal for transistors.
CASE 1329A - 03
PLASTIC
MW4IC2020NBR1
10
11
1
2
3
4
5
6
7
8
9
TO - 272 WB - 16
(Top View)
CASE 1329 - 09
PLASTIC
16
15
14
13
12
Rev. 9, 5/2006
GND
V
RF
GND
DS3/
out
1

MW4IC2020NBR1 Summary of contents

Page 1

... MW4IC2020NBR1 CASE 1329A - 272 GULL . out PLASTIC MW4IC2020GNBR1 GND 1 16 GND V 2 DS2 RD1 V 4 RG1 V 5 DS1 GS1 V 9 GS2 GS3 12 GND 11 GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections MW4IC2020NBR1 MW4IC2020GNBR1 DS3/ out 1 ...

Page 2

... Part - to - Part Phase Variation @ out 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. MW4IC2020NBR1 MW4IC2020GNBR1 2 Stage 1 Stage 2 Stage 3 Rating 3 = 25° ...

Page 3

... Min Typ Max Unit = 80 mA 240 mA 250 mA, DQ1 DQ2 DQ3 — 30 — dB — 5 — % — — dBc — — dBc — — dBc = 26 Vdc mA, DD DQ1 — 29 — dB — 15 — % — 1 — % rms — — dBc — — dBc MW4IC2020NBR1 MW4IC2020GNBR1 3 ...

Page 4

... Microstrip Z2 0.245″ x 0.087″ Microstrip Z3 0.345″ x 0.236″ Microstrip Z4 0.327″ x 0.087″ Microstrip Z5 0.271″ x 0.087″ Microstrip Figure 3. MW4IC2020NBR1(GNBR1) Test Circuit Schematic Table 6. MW4IC2020NBR1(GNBR1) Test Circuit Component Designations and Values Part C1, C2 C5, C6 C9, C11 C10 C12 C13 ...

Page 5

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC2020NBR1(GNBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor ...

Page 6

... DQ1 DQ2 DQ3 f = 1960 MHz 31 29 η 0 OUTPUT POWER (WATTS) CW out Figure 8. Power Gain and Drain Efficiency versus Output Power MW4IC2020NBR1 MW4IC2020GNBR1 6 TYPICAL CHARACTERISTICS G IRL η Vdc (PEP) out = 80 mA 200 mA 300 mA DQ2 DQ3 IMD 1850 1900 1950 f, FREQUENCY (MHz) − ...

Page 7

... Vdc T = 85_C mA 230 mA 230 mA DQ2 DQ3 25_C −30_C OUTPUT POWER (WATTS) AVG. out = 26 Vdc = 80 mA 230 mA 230 mA DQ2 DQ3 −30_C T = 25_C C 85_C 85_C 25_C −30_C OUTPUT POWER (WATTS) AVG. out versus Output Power @ 1960 MHz MW4IC2020NBR1 MW4IC2020GNBR1 2000 100 100 7 ...

Page 8

... Figure 16. MTTF Factor versus Junction Temperature MW4IC2020NBR1 MW4IC2020GNBR1 8 TYPICAL CHARACTERISTICS 3rd Stage 2nd Stage 1st Stage 90 100 110 120 130 140 150 160 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ± ...

Page 9

... Z = Device input impedance as measured from in gate to ground Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network load = 20 W PEP out Ω MW4IC2020NBR1 MW4IC2020GNBR1 9 ...

Page 10

... MW4IC2020NBR1 MW4IC2020GNBR1 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 11 ...

Page 12

... MW4IC2020NBR1 MW4IC2020GNBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 13 ...

Page 14

... MW4IC2020NBR1 MW4IC2020GNBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 15 ...

Page 16

... RoHS- compliant and/ free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MW4IC2020NBR1 MW4IC2020GNBR1 Document Number: MW4IC2020N Rev. 9, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

Related keywords