MW4IC2020NBR1 Freescale Semiconductor, MW4IC2020NBR1 Datasheet - Page 6

• Manufacturer Part Number: MW4IC2020NBR1
• Description: IC PWR AMP RF 26V 20W TO-272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW4IC2020NBR1

• Current - Supply: 80mA
• Frequency: 1.6GHz ~ 2.4GHz
• Gain: 29dB
• Package / Case: TO-272-16
• Rf Type: Cellular, GSM, EDGE, CDMA
• Voltage - Supply: 26V
• Number Of Channels: 1
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (max): 28V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

6
MW4IC2020NBR1 MW4IC2020GNBR1
−10
−20
−30
−40
−50
−60
−70
−80
35
33
31
29
27
25
23
0.1
0.1
V
I
f = 1960 MHz
Figure 6. Intermodulation Distortion Products
DQ1
DD
V
I
f = 1840 MHz, 100 kHz Tone Spacing
Figure 8. Power Gain and Drain Efficiency
DQ1
DD
= 26 Vdc
= 80 mA, I
= 26 Vdc
= 80 mA, I
versus Output Power @ 1840 MHz
P
P
DQ2
out
out
DQ2
versus Output Power
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) PEP
= 200 mA, I
= 200 mA, I
1
1
DQ3
DQ3
η
32
30
28
26
24
22
20
18
16
= 300 mA
1800
D
= 300 mA
G
ps
V
I
100 kHz Tone Spacing
Figure 5. Two - Tone Wideband Performance
DQ1
DD
10
10
= 26 Vdc, P
= 80 mA, I
TYPICAL CHARACTERISTICS
85_C
1850
3rd Order
5th Order
7th Order
T
25_C
DQ2
out
C
= −30_C
= 20 W (PEP)
= 200 mA, I
f, FREQUENCY (MHz)
100
100
36
30
24
18
12
6
0
1900
DQ3
= 300 mA
35
33
31
29
27
25
23
0.1
−10
−20
−30
−40
−50
−60
−70
−80
Figure 9. Power Gain and Drain Efficiency
1950
0.1
Figure 7. Intermodulation Distortion Products
V
I
f = 1960 MHz, 100 kHz Tone Spacing
T
DQ1
DD
C
= −30_C
G
IRL
η
IMD
= 26 Vdc
= 80 mA, I
ps
D
25_C
85_C
P
versus Output Power @ 1960 MHz
out
, OUTPUT POWER (WATTS) AVG.
versus Output Power
P
2000
out
DQ2
, OUTPUT POWER (WATTS) PEP
0
−5
−10
−15
−20
−25
−30
−35
−40
= 200 mA, I
1
1
V
I
f = 1960 MHz, 1−Carrier N−CDMA
DQ2
DD
DQ3
G
= 26 Vdc, I
= 240 mA, I
η
ps
D
= 300 mA
−30_C
Freescale Semiconductor
DQ1
10
DQ3
85_C
= 80 mA
= 250 mA
RF Device Data
3rd Order
5th Order
7th Order
25_C
10
18
15
12
9
6
3
0
100