MW5IC2030GNBR1 Freescale Semiconductor, MW5IC2030GNBR1 Datasheet - Page 7

• Manufacturer Part Number: MW5IC2030GNBR1
• Description: IC PWR AMP RF 26V 30W TO272-16GW
• Manufacturer: Freescale Semiconductor

Specifications of MW5IC2030GNBR1

• Current - Supply: 160mA
• Frequency: 1.93GHz ~ 1.99GHz
• Gain: 23dB
• Package / Case: TO-272-16 Gull Wing
• Rf Type: Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA
• Voltage - Supply: 26V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -

RF Device Data
Freescale Semiconductor
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
25
24
23
22
21
20
19
18
17
16
15
30
25
20
15
10
5
0
29
0
0.1
Figure 11. 2 - Carrier W - CDMA ACPR, IM3, Power
V
Gain, and Drain Efficiency versus Output Power
Figure 9. Intermodulation Distortion Products
Figure 13. Power Gain versus Output Power
DD
2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
V
I
(f1 + f2/2) = Center Frequency of 1960 MHz
DQ2
30
DD
3rd Order
5th Order
7th Order
= 27 Vdc, I
V
= 27 Vdc, P
η
= 230 mA, Two−Tone Measurements
DD
D
31
= 12 V
P
DQ1
32
out
G
ps
P
, OUTPUT POWER (WATTS) CW
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
out
= 160 mA, I
33
20
= 30 W (PEP), I
, OUTPUT POWER (dBm)
1
34
DQ2
35
I
f = 1960 MHz
= 230 mA, f = 1960 MHz
DQ1
IM3
DQ1
36
24 V
= 160 mA, I
= 160 mA,
ACPR
37
40
10
38
28 V
DQ2
TYPICAL CHARACTERISTICS
= 230 mA
39
32 V
40
100
60
41
−25
−30
−35
−40
−45
−50
−55
−10
−20
−30
40
30
20
10
0
27
26
25
24
23
22
21
20
19
18
17
1000
50
49
48
47
46
45
44
43
42
41
40
39
0
15
Figure 14. Broadband Frequency Response
T
Figure 12. Power Gain and Drain Efficiency
C
Figure 10. Pulse CW Output Power versus
= −30_C
16
25_C
85_C
P1dB = 44.69 dBm (29.5 W)
−30_C
17
1500
P
out
P3dB = 44.91 dBm (31 W)
18
versus Output Power
25_C
, OUTPUT POWER (WATTS) CW
f, FREQUENCY (MHz)
MW5IC2030NBR1 MW5IC2030GNBR1
1
P
19
η
G
in
Input Power
D
, INPUT POWER (dBm)
ps
85_C
S11
S21
20
2000
21
V
I
DQ1
DD
V
I
I
f = 1960 MHz
DQ1
DQ2
V
I
Pulsed CW, 8 μsec(on),
1 msec(off)
f = 1960 MHz
DD
DQ1
= 27 Vdc, P
= 160 mA, I
22
DD
= 27 Vdc
= 160 mA
= 230 mA
= 27 Vdc
= 160 mA, I
10
23
2500
Ideal
out
DQ2
24
= 30 W
Actual
DQ2
= 230 mA
25
= 230 mA
−30_C
25_C
85_C
3000
26
100
0
−5
−10
−15
−20
−25
−30
−35
27
50
45
40
35
30
25
20
15
10
5
0
7