MW7IC3825GNR1 Freescale Semiconductor, MW7IC3825GNR1 Datasheet
MW7IC3825GNR1
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MW7IC3825GNR1 Summary of contents
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... I = 230 mA, DQ1 DQ2 Bursts Volts 190 mA 230 mA, DQ1 DQ2 out RF /V out (1) MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 Document Number: MW7IC3825N Rev. 1, 11/2010 MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 3400- -3600 MHz AVG WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886- -01 TO- -270 WB- - PLASTIC MW7IC3825NR1 CASE 1887- -01 ...
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... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955 1. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 2 Stage 1, 28 Vdc 130 mA DQ1 Stage 2, 28 Vdc 230 mA DQ2 ...
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... DS(on) C oss = 0 Vdc Vdc 130 mA DQ1 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9 0.01% Probability PAE PAR ACPR IRL RCE EVM MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 Min Typ Max Unit — — 10 μAdc — — 1 μAdc — — 1 μAdc 1.2 2 2.7 Vdc — ...
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... Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 4 (continued) = 25°C unless otherwise noted) A Symbol = 28 Vdc, I ...
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... Microstrip Z27 0.185″ x 0.100″ Microstrip Z28 0.093″ x 0.100″ Microstrip Z29 0.063″ x 0.044″ Microstrip Z30 0.103″ x 0.044″ Microstrip Z31 0.080″ x 0.121″ Microstrip MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 DUT Quiescent Current Temperature Compensation NC 13 ...
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... W Chip Resistors R3 10 Ω, 1/4 W Chip Resistor V D1 MW7IC3825N/NB Rev C15 C14 C16 Figure 4. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 6 Description C3225X7R1H225M C5750X5R1H106M ATC100B2R2BT500XT ATC100B0R5BT500XT ATC100B2R0BT500XT ATC100B330JT500XT 222213668221 C4532X5R1H475M ATC100B0R3BT500XT CRCW08051001FKEA CRCW120610R0FKEA C17 C9 C13 Part Number ...
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... IRL ACPR 3425 3450 3475 3500 3525 3550 f, FREQUENCY (MHz Vdc DD I DQ1 I = 130 mA DQ1 3500 MHz 24 130 100 Figure 8. Power Gain versus Output Power MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 18 = 230 --44 --7 0 PARC --45 --0.5 --8 --46 --1 --9 --47 --1.5 --10 --48 --2 --11 --49 --2.5 --12 3575 3600 = 5 Watts Avg. ...
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... MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 8 TYPICAL CHARACTERISTICS Vdc (PEP 130 mA DD out DQ1 I = 230 mA, Two--Tone Measurements DQ2 (f1 + f2)/2 = Center Frequency of 3500 MHz IM3--L IM3--U IM7--U IM7-- TWO--TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Tone Spacing ...
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... Figure 13. MTTF versus Junction Temperature WIMAX TEST SIGNAL --10 --20 Input Signal --30 --40 --50 --60 --70 -- --90 --20 Figure 15. WiMAX Spectrum Mask Specifications MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 2nd Stage 1st Stage 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Vdc Avg., and PAE = 15%. DD out 10 MHz ...
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... MHz f = 3400 MHz Z load Figure 16. Series Equivalent Source and Load Impedance MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 Ω 3400 MHz Z source Vdc 130 mA 230 mA DQ1 DQ2 out source load MHz Ω 3400 31.82 -- j19.29 4.58 -- j7.62 3425 32.86 -- j19.70 4.42 -- j7.33 3450 33.95 -- j20.93 4 ...
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... MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 = 25°C, 50 Ohm System ∠ φ ∠ φ 22 --43.9 0.724 --87.7 --72.7 0.713 --113.0 --98.1 0.675 --141.0 --122.0 ...
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... NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Z source Ω P1dB 52.4 -- j42.5 Figure 17. Pulsed CW Output Power versus Input Power @ 3400 MHz MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 12 53 Ideal 52 P3dB = 47.11 dBm (51 P1dB = 46.13 dBm (41.0 W) ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 13 ...
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... MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 14 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 15 ...
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... MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 16 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 17 ...
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... MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 18 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 19 ...
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... MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 20 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 21 ...
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... Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628 • Added “RF Input Choke to Ground” circuitry to Functional Block Diagram and Test Circuit Schematic • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 22 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
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... Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 23 ...