MW7IC3825NBR1 Freescale Semiconductor, MW7IC3825NBR1 Datasheet - Page 2

• Manufacturer Part Number: MW7IC3825NBR1
• Description: IC PWR AMP RF 3500MHZ TO-272-16
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC3825NBR1

• Current - Supply: 230mA
• Frequency: 3.4GHz ~ 3.6GHz
• Gain: 25dB
• P1db: 30W
• Package / Case: TO-272-16
• Rf Type: WiMax
• Test Frequency: 3.6GHz
• Voltage - Supply: 32V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Stage 1 - - Off Characteristics
Stage 1 - - On Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD22--A113, IPC/JEDEC J--STD--020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
4. V
WiMAX Application
(Case Temperature 71°C, P
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes -- AN1955.
schematic.
DS
DS
GS
DS
DS
DD
GG
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 1.55 x V
D
DQ1
DQ1
GS(Q)
GS
GS
DS
= 25 μAdc)
= 0 Vdc)
= 0 Vdc)
= 130 mA)
= 130 mA, Measured in Functional Test)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
Test Methodology
Characteristic
out
(4)
(1,2)
Test Methodology
= 5 W CW)
Characteristic
Rating
(T
A
= 25°C unless otherwise noted)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
DQ1
DQ2
= 130 mA
= 230 mA
Symbol
Rating
V
V
V
I
I
I
GG(Q)
GS(th)
GS(Q)
DSS
DSS
GSS
3
Symbol
Symbol
R
V
V
V
T
Min
P
T
Package Peak Temperature
1.2
3.5
T
—
—
—
—
θJC
stg
DS
GS
DD
C
in
J
260
Typ
2.7
4.2
—
—
—
2
1B (Minimum)
IV (Minimum)
A (Minimum)
-- 65 to +150
Value
--0.5, +65
--6.0, +10
32, +0
Value
Class
Freescale Semiconductor
150
225
4.7
1.3
45
(2,3)
Max
2.7
10
—
1
1
5
RF Device Data
(continued)
°C/W
dBm
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
°C