SI4133GX2M-EVB Silicon Laboratories Inc, SI4133GX2M-EVB Datasheet - Page 23

no-image

SI4133GX2M-EVB

Manufacturer Part Number
SI4133GX2M-EVB
Description
BOARD EVAL DUAL-BAND GSM-HITACHI
Manufacturer
Silicon Laboratories Inc
Type
Synthesizerr
Datasheet

Specifications of SI4133GX2M-EVB

Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With/related Products
SI4133GX2M
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Register 1. Phase Detector Gain Address Field (A[3:0]) = 0001
*Note: When AUTOK
Name
Bit
17:6
Bit
5:4
3:2
1:0
for programming Phase Detector Gain.
D17 D16 D15 D14 D13 D12 D11 D10 D9
0
0
P
Reserved
= 1, these bits do not need to be programmed. When AUTOK
K
K
0
K
Name
P2
P1
PI
[1:0]
[1:0]
[1:0]
0
0
0
Program to zero.
IF Phase Detector Gain Constant.*
N Value
<2048
2048–4095
4096–8191
>8191
RF2 Phase Detector Gain Constant.*
N Value
<4096
4096–8191
8192–16383
>16383
RF1 Phase Detector Gain Constant.*
N Value
<8192
8192–16383
16384–32767
>32767
0
0
Rev. 1.61
= 00
= 01
= 10
= 00
= 01
= 10
= 11
= 00
= 01
= 11
K
= 11
K
K
= 10
0
PI
P2
P1
D8
0
D7
0
Function
D6
0
P
= 0, use these recommended values
D5
K
PI
[1:0]
D4
D3
K
P2
[1:0]
D2
Si4133
D1
K
P1
[1:0]
D0
23

Related parts for SI4133GX2M-EVB