SI4133GX2M-EVB Silicon Laboratories Inc, SI4133GX2M-EVB Datasheet - Page 5

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SI4133GX2M-EVB

Manufacturer Part Number
SI4133GX2M-EVB
Description
BOARD EVAL DUAL-BAND GSM-HITACHI
Manufacturer
Silicon Laboratories Inc
Type
Synthesizerr
Datasheet

Specifications of SI4133GX2M-EVB

Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With/related Products
SI4133GX2M
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Table 3. DC Characteristics
(V
Total Supply Current
RF1 Mode Supply Current
RF2 Mode Supply Current
IF Mode Supply Current
Standby Current
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
High Level Output Voltage
Low Level Output Voltage
Notes:
DD
1. RF1 = 1.6 GHz, RF2 = 1.1 GHz, IFOUT = 550 MHz, LPWR = 0.
2. For signals SCLK, SDATA, SEN, and PWDN.
3. For signal AUXOUT.
= 2.7 to 3.6 V, T
Parameter
A
1
= –40 to 85 °C)
1
2
2
2
2
3
1
1
3
Symbol
V
V
V
V
I
I
IH
IL
OH
OL
IH
IL
RF1 and IF operating
Rev. 1.61
Test Condition
I
OH
I
V
OH
PWDN = 0
V
V
V
DD
IH
DD
= –500 µA
= 500 µA
IL
=
=
= 3.6 V
=
3.6 V,
3.6 V
0 V,
V
0.7 V
DD
Min
–10
–10
–0.4
DD
Typ
18
10
9
8
1
0.3 V
Max
0.4
Si4133
27
16
16
13
10
10
DD
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
5

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