TDA7110F Infineon Technologies, TDA7110F Datasheet - Page 26

IC TX ASK/FSK 434MHZ 10-TSSOP

TDA7110F

Manufacturer Part Number
TDA7110F
Description
IC TX ASK/FSK 434MHZ 10-TSSOP
Manufacturer
Infineon Technologies
Datasheet

Specifications of TDA7110F

Frequency
433MHz ~ 435MHz
Applications
Remote Control, RKE, Security Systems
Modulation Or Protocol
ASK, FSK
Power - Output
11dBm
Current - Transmitting
21mA
Data Interface
PCB, Surface Mount
Antenna Connector
PCB, Surface Mount
Voltage - Supply
2.1 V ~ 4 V
Operating Temperature
-40°C ~ 85°C
Package / Case
10-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Memory Size
-
Data Rate - Maximum
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000611108

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TDA7110F
Manufacturer:
MAXIM
Quantity:
1 001
Part Number:
TDA7110F
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
In practice the RF-saturation voltage of the PA transistor and other parasitics reduce the
“critical” R
The output power P
R
The power efficiency (and the bandwidth) increase when operating at a slightly higher
R
The collector efficiency E is defined as
The diagram of Figure 14 was measured directly at the PA-output at V
the matching circuitry decrease the output power by about 1.5 dB. As can be seen from
the diagram, 250 Ω is the optimum impedance for operation at 3 V. For an approximation
of R
and
Figure 14
The DC collector current I
the load resistor R
collector current will show a characteristic dip at the resonance frequency for this type of
“overcritical” operation. The depth of this dip will increase with higher values of R
Data Sheet
L
L
, as shown in Figure 14.
> R
OPT
LC
and P
.
LC
.
OUT
Output power P
at other supply voltages those two formulas can be used:
L
. This is typical for overcritical operation of class C amplifiers. The
o
18
16
14
12
10
8
6
4
2
0
is reduced by operating in an “overcritical” mode characterised by
0
c
of the power amplifier and the RF output power P
100
o
(mW) and collector efficiency E vs. load resistor R
200
P
RL [Ohm]
E =
R
OUT
OPT
26
V
~
300
P
~
S
O
R
I
V
C
OPT
S
400
500
Pout [mW]
10*Ec
S
V 1.0, 2009-02-26
= 3 V. Losses in
Applications
TDA7110F
o
vary with
L
L
.
.

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