VUO55-12NO7 IXYS, VUO55-12NO7 Datasheet

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VUO55-12NO7

Manufacturer Part Number
VUO55-12NO7
Description
RECT BRIDGE 3PH 58A 1200V PWS-B
Manufacturer
IXYS
Datasheet

Specifications of VUO55-12NO7

Voltage - Peak Reverse (max)
1200V
Current - Dc Forward (if)
58A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Chassis Mount
Package / Case
PWS-B
Vrrm, (v)
1200
Vrsm, (v)
1300
Idavm, (a)
58
@ Th, (°c)
-
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a)
750
Vt0, (v)
0.85
Rt, (mohms)
8.0
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
2.70
Rthjh, Per Chip, (k/w)
3.06
Package Style
PWS-B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VUO55-12NO7
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
VUO55-12NO7
Quantity:
83
Three Phase
Rectifier Bridge
* delivery time on request
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Symbol
I
I
I
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
R
1200
1400
1600
1800
V
dAVM
FSM
2
R
T
t
VJ
VJM
stg
ISOL
F
T0
thJC
thJH
V
d
RSM
1200
1400
1600
1800
V
RRM
V
Test Conditions
T
T
V
T
V
T
V
T
V
50/60 Hz, RMS
I
Mounting torque (M5)
Terminal connection torque (M5)
typ.
Test Conditions
V
V
I
For power-loss calculations only
per diode; DC current
per module
per diode; DC current
per module
ISOL
F
C
VJ
VJ
VJ
VJ
R
R
R
R
R
R
= 85°C, module
= 0
= 0
= 0
= 0
= 45°C;
= T
= 45°C
= T
= V
= V
= 150 A;
£ 1 mA
VJM
VJM
RRM
RRM
Type
VUO 55-12NO7
VUO 55-14NO7
VUO 55-16NO7
VUO 55-18NO7*
;
;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
T
T
T
VJ
VJ
VJ
= 25°C
= T
= 25°C
VJM
~
~
~
Characteristic Values
Maximum Ratings
£
£
£
-40...+150
-40...+150
44 ± 15 %
26 ± 15 %
5 ± 15 %
3 ± 15 %
2800
2250
3000
2820
2300
2500
10.0
0.85
0.45
3.06
0.51
750
820
670
740
150
260
0.3
1.6
2.7
58
8
lb.in.
lb.in.
K/W
K/W
K/W
K/W
mW
Nm
Nm
A
A
A
A
mA
mA
V~
V~
°C
°C
°C
2
2
2
2
A
A
A
A
A
V
V
+
g
s
s
s
s
I
V
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
dAVM
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 72873
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
RRM
~
~
= 58 A
= 1200-1800 V
~
+
VUO 55
-
1 - 2

Related parts for VUO55-12NO7

VUO55-12NO7 Summary of contents

Page 1

... R per diode; DC current thJH per module Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved ~ ~ ~ Maximum Ratings 750 820 ...

Page 2

... Fig. 1 Forward current versus voltage drop per diode Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance per diode © 2000 IXYS All rights reserved Fig. 2 Surge overload current per diode I : Crest value. t: duration FSM VUO 55 ...

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