MDD172-16N1 IXYS, MDD172-16N1 Datasheet
MDD172-16N1
Manufacturer Part Number
MDD172-16N1
Description
MOD DIODE DUAL 1600V Y4-M6
Manufacturer
IXYS
Datasheet
1.MDD172-16N1.pdf
(3 pages)
Specifications of MDD172-16N1
Voltage - Forward (vf) (max) @ If
1.15V @ 300A
Current - Reverse Leakage @ Vr
20mA @ 1600V
Current - Average Rectified (io) (per Diode)
190A
Voltage - Dc Reverse (vr) (max)
1600V (1.6kV)
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Chassis Mount
Package / Case
Y4-M6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MDD172-16N1
Manufacturer:
MITSUBISHI
Quantity:
560
Part Number:
MDD172-16N1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
MDD172-16N1
Quantity:
60
High Power
Diode Modules
V
V V
Symbol
I
I
I
òi
T
T
T
V
M
Weight
Symbol
I
V
V
r
Q
I
R
R
d
d
a
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1300
1500
1700
1900
FRMS
FAVM
FSM
R
RM
T
900
2
VJ
VJM
stg
S
A
RSM
ISOL
F
T0
thJC
thJK
S
d
dt
1200
1400
1600
1800
V
800
RRM
Test Conditions
T
T
T
V
T
V
T
V
T
V
50/60 Hz, RMS
I
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
Test Conditions
T
I
For power-loss calculations only
T
T
per diode; DC current
per module
per diode; DC current
per module
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
ISOL
F
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
= 300 A; T
= 100°C; 180° sine
= 0
= 0
= 0
= 0
= T
= 45°C;
= T
= 45°C
= T
= T
= 125°C; I
= T
£ 1 mA
VJM
VJM
VJM
VJM
VJM
Type
MDD 172-08N1
MDD 172-12N1
MDD 172-14N1
MDD 172-16N1
MDD 172-18N1
; V
VJ
R
F
= V
= 25°C
= 300 A, -di/dt = 50 A/ms
RRM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
other values
see Fig. 6/7
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
Characteristic Values
-40...+150
-40...+125
Maximum Ratings
3
218 000
221 000
157 000
160 000
6600
7290
5600
6200
3000
3600
300
190
150
120
0.105
0.155
1.15
0.21
0.31
12.7
550
235
0.8
0.8
9.6
1
20
50
m/s
K/W
K/W
K/W
K/W
mW
mm
mm
mA
A
A
A
A
mC
V~
V~
°C
°C
°C
V
V
A
A
A
A
A
A
A
g
2
2
2
2
2
s
s
s
s
2
I
I
V
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
FRMS
FAVM
International standard package
Direct copper bonded Al
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
RRM
= 2x 300 A
= 2x 190 A
= 800-1800 V
1
2
MDD 172
3
2
O
3
-ceramic
1 - 3
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MDD172-16N1 Summary of contents
Page 1
... Strike distance through air A a Maximum allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 3 1 Maximum Ratings 300 190 ...
Page 2
... Fig. 1 Surge overload current I : Crest value, t: duration FSM © 2000 IXYS All rights reserved Fig. 2 ò versus time (1-10 ms) MDD 172 Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: ...
Page 3
... IXYS All rights reserved MDD 172 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) R for various conduction angles d: thJC d R (K/W) thJC DC 0.210 180° ...