MEO500-06DA IXYS, MEO500-06DA Datasheet
MEO500-06DA
Manufacturer Part Number
MEO500-06DA
Description
MOD FAST REC 600V 514A Y4-M6
Manufacturer
IXYS
Datasheet
1.MEO500-06DA.pdf
(2 pages)
Specifications of MEO500-06DA
Voltage - Forward (vf) (max) @ If
1.36V @ 300A
Current - Reverse Leakage @ Vr
24mA @ 600V
Current - Average Rectified (io) (per Diode)
514A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
300ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
Single
Mounting Type
Chassis Mount
Package / Case
Y4-M6
Vrrm, (v)
600
Ifavm, D = 0.5, Total, (a)
514
@ Tc, (°c)
75
Ifrms, (a)
726
Ifsm, 10 Ms, Tvj = 45°c, (a)
4800
Vf, Max, Tvj = 150°c, (v)
1.41
@ If, (a)
520
Trr, Typ, Tvj =25°c, (ns)
250
Irm , Max, Tvj = 100°c, (a)
132
@ -di/dt, (a/µs)
800
Rthjc, Max, (k/w)
0.071
Ptot, Max, (w)
1750
Package Style
Y4-M6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
Fast Recovery
Epitaxial Diode
(FRED) Module
Symbol
I
I
I
I
I
T
T
T
P
V
M
d
d
a
Weight
Symbol
I
V
V
r
R
R
t
I
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Preliminary data
FRMS
FAVM
FRM
FSM
2
R
rr
RM
T
V
600
t
VJ
stg
Smax
S
A
tot
ISOL
F
T0
thJH
thJC
d
RSM
V
I
FAVM
ÿÿ
rating includes reverse blocking losses at T
-di/dt =
V
600
RRM
V
T
T
t
T
T
T
T
T
50/60 Hz, RMS t = 1 min
I
Mounting torque (M6)
Terminal connection torque (M6)
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
T
T
T
I
I
For power-loss calculations only
DC current
DC current
I
V
Test Conditions
Test Conditions
P
ISOL
F
F
F
C
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
R
< 10 ms; rep. rating, pulse width limited by T
=
=
=
=
= 25°C
=
=
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 25°C
= 25°C
= 125°C
£ 1 mA
300
520
600
300
800
75
75
°C
°C; rectangular, d = 0.5
A;
A;
A
V
A/ms
Type
MEO 500-06DA
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
V
V
V
T
T
T
T
VJ
VJ
VJ
VJ
R
R
R
t = 1 s
= V
= 0.8 • V
= 0.8 • V
= 125°C
= 25°C
= 125°C
= 25°C
RRM
T
T
T
VJ
VJ
VJ
= 100°C
= 25°C
= 100°C
RRM
RRM
VJM
, V
R
= 0.6 V
RRM
Characteristic Values (per diode)
, duty cycle d = 0.5
MEO 500-06 DA
VJM
250
typ.
2.25-2.75/20-25
4.50-5.50/40-48
3
Maximum Ratings
-40...+150
-40...+125
max.
115200
117100
93300
94800
0.114
0.071
4800
5280
4320
4750
1750
3000
3600
2680
12.7
1.17
1.36
1.41
1.52
0.85
1.09
300
132
726
514
110
150
160
9.6
88
50
24
6
Nm/lb.in.
Nm/lb.in.
1
m/s
K/W
K/W
mm
mm
mW
A
A
A
A
mA
mA
mA
V~
V~
°C
°C
°C
ns
W
A
A
A
A
A
A
A
g
V
V
V
V
V
A
A
2
2
2
2
s
s
s
s
2
V
I
t
Dimensions in mm (1 mm = 0.0394")
Features
Applications
Advantages
FAVM
rr
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
Antiparallel diode for high frequency
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
RRM
= 600 V
= 514 A
= 250 ns
1
3
1 - 2
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MEO500-06DA Summary of contents
Page 1
... -di/dt = 800 A/ rating includes reverse blocking losses at T FAVM Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved MEO 500- Maximum Ratings 2680 VJM 4800 5280 4320 4750 115200 117100 ...
Page 2
... T VJ Fig. 4 Dynamic parameters versus junction temperature T 0.12 K/W 0.10 0. thJH thJS 0.06 0.04 0.02 0.00 0.001 0.01 Fig. 7 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 100° 300V =1200A 600A 300A 100 A/ -di ...