APT75GP120J Microsemi Power Products Group, APT75GP120J Datasheet

IGBT 1200V 128A 543W SOT227

APT75GP120J

Manufacturer Part Number
APT75GP120J
Description
IGBT 1200V 128A 543W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT75GP120J

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 75A
Current - Collector (ic) (max)
128A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
7.04nF @ 25V
Power - Max
543W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT75GP120JMI
APT75GP120JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT75GP120J
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT75GP120JDF3
Manufacturer:
TI/NSC
Quantity:
20 000
Part Number:
APT75GP120JDQ3
Manufacturer:
MICRON
Quantity:
101
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
RBSOA
T
Symbol
V
V
BV
V
V
J
GE(TH)
CE(ON)
I
V
I
I
,T
I
I
P
GEM
CES
GES
CES
T
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
(V
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= 1200V, V
= 1200V, V
GE
GE
• 50 kHz operation @ 800V, 20A
• 20 kHz operation @ 800V, 44A
• RBSOA rated
C
C
C
GE
GE
= 25°C
= 25°C
= 110°C
= 15V, I
= 15V, I
, I
= ±20V)
J
C
= 150°C
GE
= 2.5mA, T
GE
GE
C
C
= 0V, I
®
= 75A, T
= 75A, T
= 0V, T
= 0V, T
IGBT
C
j
= 1000µA)
j
j
= 25°C)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
APT75GP120J
= 25°C unless otherwise specified.
1200
MIN
3
300A @ 960V
APT75GP120J
-55 to 150
ISOTOP
TYP
1200
4.5
3.3
3.0
±20
±30
128
300
543
300
57
®
1000
5000
±100
MAX
3.9
6
G
"UL Recognized"
1200V
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E

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APT75GP120J Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com APT75GP120J ISOTOP ® 25°C unless otherwise specified. C APT75GP120J 1200 ±20 ±30 128 57 300 300A @ 960V 543 -55 to 150 300 MIN TYP MAX 1200 3 4.5 6 3.3 3.9 3.0 2 1000 2 5000 ± ...

Page 2

... I = 75A +25° Inductive Switching (125° 600V 15V 75A +125° test circuit. (See Figures 21, 22.) on2 APT75GP120J MIN TYP MAX 7035 460 = 25V 80 7.5 320 50 140 300 960V 163 56 1620 4100 2500 20 40 244 115 1620 5850 4820 MIN TYP MAX ...

Page 3

... 25°C. 2.0 1 FIGURE 6, On State Voltage vs Junction Temperature 180 160 140 120 100 100 125 FIGURE 8, DC Collector Current vs Case Temperature APT75GP120J 10V. 250µs PULSE TEST <0.5 % DUTY CYCLE T =25° =125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (V = 10V) ...

Page 4

... COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 14, Turn Off Energy Loss vs Collector Current 15000 12500 10000 E 7500 off 5000 75A off E off 2500 37. FIGURE 16, Switching Energy Losses vs Junction Temperature APT75GP120J =15V,T =125° 10V,T =125° 15V,T =25° 10V,T =25° 600V = 100 120 140 160 = = ...

Page 5

... C oes 150 100 C res Figure 18, Minimim Switching Safe Operating Area SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) 50 0.00140F 10 0.0416F 0.543F APT75GP120J 0 0 100 200 300 400 500 600 700 800 900 1000 V , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak 1.0 ° 125 ...

Page 6

... Emitter 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Emitter Dimensions in Millimeters and (Inches) APT75GP120J 10% t d(on 90 10% V TEST *DRIVER SAME TYPE AS D.U. 100uH ...

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