APT75GP120JDQ3 Microsemi Power Products Group, APT75GP120JDQ3 Datasheet

IGBT 1200V 128A 543W SOT227

APT75GP120JDQ3

Manufacturer Part Number
APT75GP120JDQ3
Description
IGBT 1200V 128A 543W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT75GP120JDQ3.pdf (9 pages)

Specifications of APT75GP120JDQ3

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 75A
Current - Collector (ic) (max)
128A
Current - Collector Cutoff (max)
1.25mA
Input Capacitance (cies) @ Vce
7.04nF @ 25V
Power - Max
543W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT75GP120JDQ3MI
APT75GP120JDQ3MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT75GP120JDQ3
Manufacturer:
MICRON
Quantity:
101
The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
RBSOA
T
V
V
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• 50 kHz operation @ 800V, 20A
• 20 kHz operation @ 800V, 44A
• RBSOA Rated
CE
CE
CE
@ T
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
C
GE
GE
= 150°C
= 25°C
= 110°C
= 15V, I
= 15V, I
= ±20V)
, I
J
C
= 150°C
GE
= 2.5mA, T
GE
GE
®
C
C
= 0V, I
IGBT
= 75A, T
= 75A, T
= 0V, T
= 0V, T
C
j
= 1250µA)
j
j
= 25°C)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
APT75GP120JDQ3
3
300A @ 960V
-55 to 150
APT75GP120JDQ3
1200
±20
128
300
543
300
TYP
57
4.5
3.3
3.0
APT75GP120JDQ3
ISOTOP
G
1200V
1250
5500
±100
MAX
3.9
6
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT75GP120JDQ3 Summary of contents

Page 1

... 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT75GP120JDQ3 APT75GP120JDQ3 ISOTOP ® 25°C unless otherwise specified. C APT75GP120JDQ3 1200 ±20 128 57 300 300A @ 960V 543 -55 to 150 300 MIN TYP MAX 1200 3 4.5 6 3.3 3.9 3.0 2 1250 2 5500 ± ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Reverse Bias Safe Operating ...

Page 3

T = 25° 125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 250 250µs PULSE TEST<0.5 % DUTY CYCLE ...

Page 4

V = 15V 600V 25°C T =125° 5Ω 100 µ 100 120 140 160 I , COLLECTOR ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS) 50 0.0014 10 0.0416 5 ° 125 C J ° 0.543 XXXV 5Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT75GP120JDQ3 200 400 600 800 1000 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 min (f max f = max1 t d(on max2 E T ...

Page 6

APT60DQ120 90% Gate Voltage t t d(off) f Collector Voltage 90% 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J 10% Gate Voltage ...

Page 7

... RECTANGULAR PULSE DURATION (seconds) RC MODEL Junction temp. (°C) 0.148 Power 0.238 (watts) 0.174 Case temperature. (°C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL APT75GP120JDQ3 = 25°C unless otherwise specified. C APT75GP120JDQ3 60 88 540 MIN TYP MAX 2.8 3.48 2.17 MIN TYP MAX 25°C ...

Page 8

T = 175°C J 120 100 T = 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. ...

Page 9

... Emitter/Anode 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Dimensions in Millimeters and (Inches) APT75GP120JDQ3 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8 ...

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