APTGT600DA60G Microsemi Power Products Group, APTGT600DA60G Datasheet
APTGT600DA60G
Specifications of APTGT600DA60G
Related parts for APTGT600DA60G
APTGT600DA60G Summary of contents
Page 1
... Reverse Bias Safe Operating Area * Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT600DA60G V ® I Application • ...
Page 2
... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT600DA60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 600A T = 150°C C ...
Page 3
... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT600DA60G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...
Page 4
... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 0.9 0.06 0.7 0.05 0.04 0.5 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGT600DA60G =15V) GE 1200 T 1000 800 T =150°C J 600 400 200 =25° 1.5 2 2.5 0 ...
Page 5
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT600DA60G 1200 V ...