MUBW35-12E7 IXYS, MUBW35-12E7 Datasheet

MUBW35-12E7

Manufacturer Part Number

MUBW35-12E7

Description

MODULE IGBT CBI E2

Manufacturer

IXYS

Type

Converter/Brake/Inv (CBI) IGBT Modulesr

Datasheet

1.MUBW35-12E7.pdf (8 pages)

Specifications of MUBW35-12E7

Configuration

Three Phase Inverter with Brake

Igbt Type

NPT

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

2.8V @ 15V, 35A

Current - Collector (ic) (max)

52A

Current - Collector Cutoff (max)

400µA

Input Capacitance (cies) @ Vce

2nF @ 25V

Power - Max

225W

Input

Three Phase Bridge Rectifier

Ntc Thermistor

Yes

Mounting Type

Chassis Mount

Package / Case

Channel Type

Collector-emitter Voltage

1.2kV

Collector Current (dc) (max)

52A

Gate To Emitter Voltage (max)

±20V

Pin Count

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

125C

Operating Temperature Classification

Automotive

Mounting Style

Screw

Product

Power Semiconductor Modules

Reverse Voltage

1.6 KV

Vrrm, Rect 1/3 Ph., (v)

1600

Idavm, Tc = 80°c, Rect 1/3 Ph., (a)

Rthjc, Typ, Rect 1/3 Ph., (k/w)

1.3

Vces, Inv 3 - Ph., (v)

1200

Ic25, Tc = 25°c, Inv 3 - Ph., (a)

Ic80, Tc = 80°c, Inv 3 - Ph., (a)

Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)

2.2

Rthjc, Typ, Inv 3 - Ph., (k/w)

0.55

Vces, Br Chopper, (v)

1200

Ic80, Tc = 80°c, Br Chopper, (a)

Rthjc, Typ, Br Chopper, (k/w)

0.7

Package Style

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Compliant, Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MUBW35-12E7

Manufacturer:

ATMEL

Quantity:

301

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

MUBW35-12E7

Quantity:

Current page: 1 of 8
Download datasheet (350Kb)

Converter - Brake - Inverter Module

NPT

Symbol

IXYS reserves the right to change limits, test conditions and dimensions.

Input Rectifier Bridge D11 - D16

FAV

DAVM

FSM

FAVM

FSM

RRM

tot

RRM

Three Phase

thJC

D12

D11

Rectifier

= 1600 V

= 42 A

= 300 A

-IGBT

D13

D14

Conditions

(per diode)

D16

D15

= 35 A; T

= 80°C; sine 180°

= 80°C; rectangular; d =

= 25°C

= V

= 25°C; t = 10 ms; sine 50 Hz

Brake Chopper

C25

RRM

CES

CE(sat)

; T

= 1200 V V

= 35 A

= 2.3 V

= 25°C

= 125°C

= 25°C

= 125°C

C25

Three Phase

CES

CE(sat)

Inverter

bridge

= 1200 V

= 52 A

= 2.2 V

= 25°C, unless otherwise specified)

min.

Characteristic Values

Maximum Ratings

typ.

1.2

0.4

1600

300

100

max.

0.02 mA

1.4

1.3 K/W

(CBI2)

NTC

See outline drawing for pin arrangement

Application: AC motor drives with

• Input from single or three phase grid

• Three phase synchronous or

• asynchronous motor

• electric braking operation

Features

• High level of integration - only one power

• Inverter with NPT

• Epitaxial free wheeling diodes with

• Industry standard package with insulated

• Temperature sense included

semiconductor module required for the

whole drive

- low saturation voltage

- positive temperature coefficient

- fast switching

- short tail current

Hiperfast and soft reverse recovery

copper base plate and soldering pins for

PCB mounting

MUBW 35-12 E7

IGBTs

E72873

20070912a

1 - 8

Related parts for MUBW35-12E7

MUBW35-12E7 Summary of contents

Page 1

... T = 25°C tot C Symbol Conditions 25° 125° 25° RRM T = 125° (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Three Phase Inverter = 1200 V CES C25 V = 2.2 V CE(sat) Maximum Ratings ...

Page 2

... F80 C Symbol Conditions /dt = -1100 A/µ 600 rec(off) R (per diode) thJC © 2007 IXYS All rights reserved Maximum Ratings 1200 ± Ω 125° CES = 39 Ω 125° 225 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2 125°C 2 ...

Page 3

... 125° 25° RRM T = 125° /dt = -400 A/µ 600 thJC © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 20 ± Ω 125° CES = 82 Ω 125° 180 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2 125°C 2 ...

Page 4

... Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") © 2007 IXYS All rights reserved Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Maximum Ratings °C -40...+125 °C 150 °C -40 ...

Page 5

... Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180° K/W 1.2 Z thJC 0.8 0.4 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2007 IXYS All rights reserved 200 45°C VJ 150 I FSM 100 T = 150°C VJ ...

Page 6

... Q G MUBW 35-12 E7 120 100 Fig. 8 Typ. output characteristics 125° Fig. 10 Typ. forward characteristics of free wheeling diode 10 K/W 1 0.1 0.01 single pulse 0.001 0.01 0.1 Fig. 12 Typ. transient thermal impedance 125° 25° diode IGBT MUBW3512E7 20070912a ...

Page 7

... T = 125° 600 V R 56Ω 50 75Ω 40 75Ω 56Ω 200 400 600 800 1000 -di /dt [A/µs] F Fig. 17 Typ. turn off characteristics of free wheeling diode © 2007 IXYS All rights reserved 100 off 600 ± Ω 125° Fig ...

Page 8

... 125°C VJ 2.5 E off 2 100 Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC Ω 100 T Fig. 24 Typ. thermistorresistance versus temperature 1000 ns 750 t t d(off) 500 250 Ω 120 140 R G MUBW3512E7 125 C 150 20070912a ...

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