CM100DU-24NFH Powerex Inc, CM100DU-24NFH Datasheet - Page 3

• Manufacturer Part Number: CM100DU-24NFH
• Description: IGBT MOD DUAL 1200V 100A NFH SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM100DU-24NFH

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 6.5V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 16nF @ 10V
• Power - Max: 560W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 560W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 100A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA513
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2C-5015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2C-5015 - KIT DEV BOARD 5A FOR IGBTBG2C-3015 - KIT DEV BOARD 3A FOR IGBTBG2A-NFH - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1004

CM100DU-24NFH
Dual IGBTMOD™ NFH-Series Module
100 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T j = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Rev. 11/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
200
150
100
50
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
6
T
COLLECTOR-EMITTER VOLTAGE, V
T
j
j
= 25°C
= 25° C
GATE-EMITTER VOLTAGE, V
8
OUTPUT CHARACTERISTICS
2
COLLECTOR-EMITTER
10
(TYPICAL)
(TYPICAL)
4
12
V
GE
= 20V
14
15
6
I
I
I
C
C
C
= 200A
= 100A
= 40A
GE
16
, (VOLTS)
CE
, (VOLTS)
8
14
13
12
11
10
18
9
8
10
20
R th(j-c) 'Q
R th(j-c) 'D
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
R G
200
150
100
10
10
10
50
0
3
2
1
0
0
EMITTER-COLLECTOR VOLTAGE, V
V
GE
GATE-EMITTER VOLTAGE, V
Per 1/2 Module, Thermal Grease Applied
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
1
= 10V
Per FWDi 1/2 Module, T C Reference
Per FWDi 1/2 Module, T C Reference
Per IGBT 1/2 Module, T C Reference
T
T
T
T
j
j
j
j
T C Reference Point Under Chips
5
= 25°C
= 125°C
= 25°C
= 125°C
FREE-WHEEL DIODE
Point per Outline Drawing
Point per Outline Drawing
Point per Outline Drawing
(TYPICAL)
(TYPICAL)
Per IGBT 1/2 Module,
2
10
Test Conditions
3
GE
, (VOLTS)
15
EC
, (VOLTS)
4
20
5
10
10
10
10
-1
9
8
7
6
5
4
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
-1
Min.
COLLECTOR-EMITTER VOLTAGE, V
3.1
V
V
—
—
—
—
—
GE
GE
COLLECTOR-CURRENT, I
= 15V
= 0V
T
T
j
j
CAPACITANCE VS. V CE
50
COLLECTOR-EMITTER
= 25°C
= 125°C
10
0.07
Typ.
—
—
—
—
—
0
(TYPICAL)
(TYPICAL)
100
Max.
C
0.22
0.47
0.17
0.29
10
, (AMPERES)
31
—
1
150
C
C
C
CE
ies
oes
res
, (VOLTS)
°C/W
°C/W
°C/W
°C/W
°C/W
Units
200
10
Ω
2
3