CM200DU-12NFH Powerex Inc, CM200DU-12NFH Datasheet - Page 4

• Manufacturer Part Number: CM200DU-12NFH
• Description: IGBT MOD DUAL 600V 200A NFH SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM200DU-12NFH

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 55nF @ 10V
• Power - Max: 590W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 590W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Distributorinventory: View
• Voltage: 600V
• Current: 200A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA507
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2C-5015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2C-5015 - KIT DEV BOARD 5A FOR IGBTBG2C-3015 - KIT DEV BOARD 3A FOR IGBTBG2A-NFH - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1082; CM200DU-12NFH

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM200DU-12NFH
Dual IGBTMOD™ NFH-Series Module
200 Amperes/600 Volts
10
10
10
10
10
10
10
10
10
10
-1
-2
-3
3
2
1
2
1
0
0
10
10
10
REVERSE RECOVERY CHARACTERISTICS
1
0
V
V
I
T
Inductive Load
C Snubber at Bus
-3
C
Single Pulse
T
Per Unit Base =
R
R
CC
GE
j
= 125C
C
= 200A
th(j-c)
th(j-c)
IMPEDANCE CHARACTERISTICS
0.21C/W
(IGBT)
0.35C/W
(FWDi)
= 25C
= 300V
= 15V
EMITTER CURRENT, I
I
t
rr
rr
10
=
=
TRANSIENT THERMAL
GATE RESISTANCE, R
SWITCHING LOSS VS.
GATE RESISTANCE
-2
(IGBT & FWDi)
(TYPICAL)
(TYPICAL)
TIME, (s)
10
10
10
10
-1
-5
2
1
E
, (AMPERES)
V
V
R
T
Inductive Load
G
CC
GE
j
G
, (Ω)
= 25C
10
10
= 6.3Ω
= 300V
= 15V
-4
E
E
0
SW(on)
SW(off)
10
10
10
10
-3
3
2
10
10
10
1
10
10
10
3
2
1
-1
-2
-3
10
10
10
20
16
12
8
4
0
-1
1
0
10
REVERSE RECOVERY SWITCHING LOSS VS.
0
1
I
C
= 200A
300
EMITTER CURRENT, I
GATE CHARGE VS. V GE
GATE CHARGE, Q
EMITTER CURRENT
600
(TYPICAL)
V
CC
900
10
= 200V
2
V
V
R
T
Inductive Load
C Snubber at Bus
E
1200 1500
j
, (AMPERES)
G
CC
GE
G
= 125C
, (nC)
V
= 6.3Ω
E
CC
= 300V
= 15V
rr
= 300V
1800
10
3
10
10
10
10
10
10
-1
-1
1
0
1
0
10
REVERSE RECOVERY SWITCHING LOSS VS.
10
0
1
COLLECTOR CURRENT, I
COLLECTOR CURRENT
GATE RESISTANCE, R
SWITCHING LOSS VS.
GATE RESISTANCE
E
rr
(TYPICAL)
(TYPICAL)
10
10
2
1
V
V
R
T
Inductive Load
C Snubber at Bus
V
V
I
T
Inductive Load
C Snubber at Bus
E
CC
GE
j
G
CC
GE
j
= 125C
C
= 125C
= 200A
, (AMPERES)
= 6.3Ω
= 300V
= 15V
G
= 300V
= 15V
E
E
, (Ω)
SW(on)
SW(off)
Rev. 11/09
10
10
3
2