CM200DU-12F Powerex Inc, CM200DU-12F Datasheet - Page 4

• Manufacturer Part Number: CM200DU-12F
• Description: IGBT MOD DUAL 600V 200A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM200DU-12F

• Igbt Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 54nF @ 10V
• Power - Max: 590W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 590W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 835-1081; CM200DU-12F

4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200DU-12F
Trench Gate Design Dual IGBTMOD™
200 Amperes/600 Volts
400
300
200
100
10
10
10
10
10
10
10
0
3
2
1
0
2
1
0
10
0
0
REVERSE RECOVERY CHARACTERISTICS
1
EMITTER-COLLECTOR VOLTAGE, V
COLLECTOR-EMITTER VOLTAGE, V
T
T
j
j
= 25°C
= 25
I
FORWARD CHARACTERISTICS
t
rr
rr
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
1.0
V
o
C
1
GE
FREE-WHEEL DIODE
= 20V
15
(TYPICAL)
(TYPICAL)
11
(TYPICAL)
2.0
10
2
7.5
2
8
E
10
, (AMPERES)
8.5
V
V
R
T
Inductive Load
9.5
9
CC
GE
j
G
= 25°C
3.0
= 3.1 Ω
EC
3
CE
= 300V
= ±15V
, (VOLTS)
, (VOLTS)
4.0
10
4
3
10
10
10
2
1
0
10
10
10
10
20
16
12
-1
8
4
0
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
I
C
GE
V
COLLECTOR-CURRENT, I
= 200A
GE
= 0V
= 15V
100
T
T
CAPACITANCE VS. V
COLLECTOR-EMITTER
j
j
GATE CHARGE, V
GATE CHARGE, Q
= 25°C
= 125°C
600
10
0
V
(TYPICAL)
(TYPICAL)
CC
200
= 200V
1200
G
C
10
, (nC)
, (AMPERES)
V
GE
CC
1
300
CE
CE
= 300V
C
, (VOLTS)
C
C
oes
ies
res
400
1800
10
2
10
10
10
10
10
10
10
10
10
-1
-2
-3
5
4
3
2
1
0
1
0
3
2
1
0
SATURATION VOLTAGE CHARACTERISTICS
10
10
0
0
-3
Per Unit Base
R
R
Single Pulse
T
T
C
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
j
GATE-EMITTER VOLTAGE, V
6
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
= 25°C
= 25°C
10
= 0.21°C/W (IGBT)
= 0.35°C/W (FWDi)
TRANSIENT THERMAL
COLLECTOR-EMITTER
8
-2
10
I
t
t
C
(IGBT & FWDi)
d(off)
d(on)
HALF-BRIDGE
10
= 80A
1
(TYPICAL)
(TYPICAL)
t
t
r
f
I
TIME, (s)
C
10
10
= 200A
12
I
C
-1
-5
= 400A
14
C
V
V
R
T
Inductive Load
10
, (AMPERES)
j
CC
GE
G
GE
= 125°C
2
10
10
= 3.1 Ω
16
, (VOLTS)
= 300V
= ±15V
-4
0
18
10
10
10
20
-3
3
1
10
10
10
-1
-2
-3